AT45DB041-CC ATMEL [ATMEL Corporation], AT45DB041-CC Datasheet
AT45DB041-CC
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AT45DB041-CC Summary of contents
Page 1
... Commercial and Industrial Temperature Ranges Description The AT45DB041 is a 2.7-volt only, serial interface Flash memory suitable for in-sys- tem reprogramming. Its 4,325,376 bits of memory are organized as 2048 pages of 264-bytes each. In addition to the main memory, the AT45DB041 also contains two SRAM data buffers of 264-bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed ...
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... To start a page read, the 8-bit opcode, 52H, is followed by 24 address bits and 32 don’t care bits. In the AT45DB041, the first four address bits are reserved for larger density devices (see Notes on page 8), the next 11 address bits ...
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... The loading of the opcode and the address bits is the same as described pre- viously ...
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... The device density is indicated using bits 5, 4, and 3 of the status register. For the AT45DB041, the three bits are 0, 1, and 1. The decimal value of these three binary bits does not equate to the device density; the three bits represent a ...
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... This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. AT45DB041 - 2.7V to 3.6V 5 ...
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... P t RESET Pulse Width RST t RESET Recovery Time REC Input Test Waveforms and Measurement Levels 2.4V AC DRIVING LEVELS 0.45V < (10 AT45DB041 6 Condition CS, RESET all inputs at IH CMOS levels MHz mA 3.6V OUT 3. CMOS levels IN ...
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AC Waveforms Two different timing diagrams are shown below. Waveform 1 shows the SCK signal being low when CS makes a high- to-low transition, and Waveform 2 shows the SCK signal being high when CS makes a high-to-low transition. Both ...
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... It is recommended that “r” logical “0” for densities of 4M bit or smaller. 3. For densities larger than 4M bit, the “r” bits become the most significant Page Address bit for the appropriate density. AT45DB041 8 SI CMD 8 bits ...
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... Main Memory Page Program through Buffers CS SI CMD PA9-7 Buffer Write CS SI CMD Buffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page Each transition represents 8 bits and 8 clock cycles FLASH MEMORY ARRAY MAIN MEMORY PAGE PROGRAM ...
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... Main Memory Page to Buffer Transfer (Data from Flash Page Read into Buffer Buffer Read Each transition represents 8 bits and 8 clock cycles AT45DB041 10 FLASH MEMORY ARRAY MAIN MEMORY PAGE READ I/O INTERFACE SO PA6-0, BA8 BA7-0 X Starts reading page data into buffer ...
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... Detailed Bit-Level Read Timing – Inactive Clock Polarity Low Main Memory Page Read CS SCK 1 2 tSU COMMAND OPCODE Buffer Read CS SCK 1 2 tSU COMMAND OPCODE Status Register Read CS SCK 1 2 tSU HIGH-IMPEDANCE ...
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... COMMAND OPCODE Buffer Read CS SCK 1 2 tSU COMMAND OPCODE Status Register Read CS SCK tSU HIGH-IMPEDANCE SO AT45DB041 HIGH-IMPEDANCE HIGH-IMPEDANCE COMMAND OPCODE ...
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... PA4 PA4 PA3 PA3 PA2 PA2 PA1 PA1 PA0 PA0 Main Memory Main Memory Page to Buffer 1 Page to Buffer 2 Compare Compare 60H 61H ...
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... (Don’t Care) r (reserved bits) AT45DB041 14 Buffer 2 to Main Memory Main Main Page Memory Memory Program Page Page without Program Program Built-In Through Through Erase Buffer 1 Buffer 2 Opcode 89H 82H ...
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... This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by- page page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer to Main Memory Page Program operation. 3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page within the entire array ...
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... Other algorithms can be used to rewrite portions of the Flash array. Low power applications may choose to wait until 10,000 cumulative page erase/program operations have accumulated before rewriting all pages of the Flash array. See application note AN-4 (“Using Atmel’s Serial DataFlash”) for more details. AT45DB041 16 START ...
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... Wide, Plastic Gull-Wing Small Outline Package (SOIC) 28T 28-Lead, Plastic Thin Small Outline Package (TSOP) 24C1 24-Ball Array Plastic Chip-Scale Ball Grid Array (CBGA) Ordering Code AT45DB041-JC AT45DB041-RC AT45DB041-TC AT45DB041-CC AT45DB041-JI AT45DB041-RI AT45DB041-TI AT45DB041-CI Package Type Package Operation Range 32J ...
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... Plastic Thin Small Outline Package (TSOP) Dimensions in Millimeters and (Inches)* *Controlling dimension: millimeters AT45DB041 18 28R, 28-Lead, 0.330" Wide, Plastic Gull Wing Small Outline (SOIC) Dimensions in Inches and (Millimeters) .025(.635) X 30° - 45° .012(.305) .008(.203) ...