R5F21262SDFP RENESAS [Renesas Technology Corp], R5F21262SDFP Datasheet - Page 26

• Manufacturer Part Number: R5F21262SDFP
• Description: SINGLE-CHIP 16-BIT CMOS MCU
• Manufacturer: RENESAS [Renesas Technology Corp]

R8C/26 Group, R8C/27 Group
Rev.2.10
REJ03B0168-0210
Table 5.4
NOTES:
−
−
−
t
−
−
−
−
−
−
−
d(SR-SUS)
Symbol
1. V
2. Definition of programming/erasure endurance
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
5. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
6. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
7. The data hold time includes time that the power supply is off or the clock is not supplied.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100 or 1,000), each block can be erased n times. For example, if 1,024
1-byte writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. It is also advisable to retain data on the erasure endurance of each block and limit
the number of erase operations to a certain number.
command at least three times until the erase error does not occur.
CC
Sep 26, 2008
= 2.7 to 5.5 V at T
Program/erase endurance
Byte program time
Block erase time
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Interval from program start/restart until
following suspend request
Time from suspend until program/erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
Flash Memory (Program ROM) Electrical Characteristics
(7)
Parameter
opr
Page 26 of 69
= 0 to 60°C, unless otherwise specified.
(2)
R8C/26 Group
R8C/27 Group
Ambient temperature = 55°C
Conditions
1,000
100
Min.
650
2.7
2.2
20
−
−
−
0
−
0
(3)
(3)
Typ.
Standard
0.4
50
5. Electrical Characteristics
−
−
−
−
−
−
−
−
−
−
97 + CPU clock
3 + CPU clock
× 6 cycles
× 4 cycles
Max.
400
5.5
5.5
60
−
−
9
−
−
−
times
times
year
Unit
µs
µs
µs
ns
µs
°C
V
V
s