ALD1101A_12 ALD [Advanced Linear Devices], ALD1101A_12 Datasheet

ALD1101A_12

Manufacturer Part Number

ALD1101A_12

Description

DUAL N-CHANNEL MATCHED MOSFET PAIR

Manufacturer

ALD [Advanced Linear Devices]

Datasheet

1.ALD1101A_12.pdf (6 pages)

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FEATURES

• Low threshold voltage of 0.7V

• Low input capacitance

• Low Vos grades -- 2mV, 5mV, 10mV

• High input impedance -- 10

• Negative current (I

• Enhancement-mode (normally off)

• DC current gain 10

• RoHS compliant

ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))

* Contact factory for leaded (non-RoHS) or high temperature versions.

GENERAL DESCRIPTION

The ALD1101 is a monolithic dual N-channel matched transistor pair

intended for a broad range of analog applications. These enhancement-

mode transistors are manufactured with Advanced Linear Devices' en-

hanced ACMOS silicon gate CMOS process.

The ALD1101 offers high input impedance and negative current tempera-

ture coefficient. The transistor pair is matched for minimum offset voltage

and differential thermal response, and it is designed for switching and

amplifying applications in +2V to +12V systems where low input bias

current, low input capacitance and fast switching speed are desired. Since

these are MOSFET devices, they feature very large (almost infinite)

current gain in a low frequency, or near DC, operating environment. When

used with an ALD1102, a dual CMOS analog switch can be constructed.

In addition, the ALD1101 is intended as a building block for differential

amplifier input stages, transmission gates, and multiplexer applications.

The ALD1101 is suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result in extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 50pA at room temperature. For example, DC beta of the device

at a drain current of 5mA at 25 C is = 5mA/50pA = 100,000,000.

0 C to +70 C

8-Pin

Small Outline

Package (SOIC)

ALD1101ASAL

ALD1101BSAL

ALD1101SAL

INEAR

DVANCED

EVICES,

Operating Temperature Range

) temperature coefficient

NC.

0 C to +70 C

8-Pin

Plastic Dip

Package

ALD1101APAL

ALD1101BPAL

ALD1101PAL

DUAL N-CHANNEL MATCHED MOSFET PAIR

typical

-55 C to +125 C

8-Pin

CERDIP

Package

ALD1101DA

www.aldinc.com

PIN CONFIGURATION

BLOCK DIAGRAM

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Analog switches

• Choppers

• Differential amplifier input stage

• Voltage comparator

• Data converters

• Sample and Hold

• Analog inverter

SOURCE

* NC pin is internally connected. Do not connect externally.

DRAIN

GATE

DRAIN 1 (3)

DRAIN 2 (5)

SAL, PAL, DA PACKAGES

ALD1101A/ALD1101B

GATE 1 (2)

GATE 2 (6)

TOP VIEW

SOURCE 1 (1)

SUBSTRATE (8)

SOURCE 2 (7)

ALD1101

SUBSTRATE

SOURCE

GATE

DRAIN

Related parts for ALD1101A_12

ALD1101A_12 Summary of contents

Page 1

A DVANCED L INEAR D I EVICES, NC. DUAL N-CHANNEL MATCHED MOSFET PAIR GENERAL DESCRIPTION The ALD1101 is a monolithic dual N-channel matched transistor pair intended for a broad range of analog applications. These enhancement- mode transistors are manufactured with ...

Page 2

ABSOLUTE MAXIMUM RATINGS Drain-source voltage Gate-source voltage Power dissipation Operating temperature range Storage temperature range Lead temperature, 10 seconds CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS T = ...

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ALD1101A_12 ALD [Advanced Linear Devices], ALD1101A_12 Datasheet

ALD1101A_12

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ALD1101A_12 Summary of contents

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