2SK3112-S NEC [NEC], 2SK3112-S Datasheet

Page 1

... V GSS D(DC D(pulse) P 100 1 150 ° +150 °C stg 250 2SK3112 PART NUMBER PACKAGE 2SK3112 TO-220AB 2SK3112-S TO-262 2SK3112-ZJ TO-263(MP-25ZJ) (TO-220AB) (TO-262) (TO-263) © 1998,2001 ...

Page 2

... F(S- di/ TEST CIRCUIT 2 SWITCHING TIME D.U. PG Duty Cycle 1% Data Sheet D13335EJ1V0DS 2SK3112 TYP. MAX. Unit 100 2.5 4 110 m 1600 pF 430 pF 280 140 ns 110 ns 70 ...

Page 3

... 0.1 0.01 0.01 100 125 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.6 Pulsed V GS Pulsed 0.5 0.4 0.3 0.2 0 0.1 Data Sheet D13335EJ1V0DS 2SK3112 = 125 ˚ ˚C 25 ˚C -25 ˚ Pulsed Gate to Source Voltage - Pulsed T = 25˚C ch 25˚ ...

Page 4

... C oss 10 C rss 1 100 1000 0.1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 240 200 160 120 100 Data Sheet D13335EJ1V0DS 2SK3112 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 0.5 1.0 1 Source to Drain Voltage - V SD SWITCHING CHARACTERISTICS t d(off d(on 100 V ...

Page 5

... Data Sheet D13335EJ1V0DS TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 120 100 Case Temperature - ˚C C 1000 1.25˚C/W th(ch-C) Single Pulse 10 m 100 100 PW - Pulse Width - sec 2SK3112 60 80 100 120 140 160 = 83.3˚C/W th(ch-A) 1000 5 ...

Page 6

... INDUCTIVE LOAD 100 0.01 0 Inductive Load - mH 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 100 Starting T ch Data Sheet D13335EJ1V0DS 2SK3112 V = 100 100 125 150 - Starting Channel Temperature - ˚C ...

Page 7

... MAX. 1.3±0.2 4 1.3±0.2 0.75±0.3 2.54 TYP. 2.8±0.2 EQUIVALENT CIRCUIT 4.8 MAX. 1.3±0.2 Gate Gate Protection Diode 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Data Sheet D13335EJ1V0DS 2SK3112 4.8 MAX. 10 TYP. 1.3±0 0.5±0.2 2.8±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Drain Body Diode Source 7 ...

Page 8

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SK3112 The M8E 00. 4 ...