2SA1515S_10 ROHM [Rohm], 2SA1515S_10 Datasheet

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2SA1515S_10

Manufacturer Part Number
2SA1515S_10
Description
Medium Power Transistor (-32V,-1A)
Manufacturer
ROHM [Rohm]
Datasheet
1.2SA1515S_10.pdf (4 pages)
Medium Power Transistor (32V,1A)
Features
1) Low V
2) Compliments 2SD1858
Structure
Epitaxial planar type
PNP silicon transistor
Absolute maximum ratings (Ta=25C)
Electrical characteristics (Ta=25C)
○
∗
c
∗
∗
www.rohm.com
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
V
(I
1 Single pulse, Pw=100ms
2 Printed circuit board, 1.7 mm thick, collector copper plating 100mm
Measured using pulse current.
2SA1515S / 2SB1237
2010 ROHM Co., Ltd. All rights reserved.
CE(sat)
C
/ I
B
= 500mA / 50mA)
Parameter
CE(sat).
= 0.2V(Typ.)
Parameter
2SA1515S
2SB1237
Symbol
V
V
V
Tstg
P
CBO
CEO
EBO
I
Tj
C
C
Symbol
BV
BV
BV
V
Cob
I
I
h
CE(sat)
CBO
EBO
f
FE
T
CBO
CEO
EBO
−55 to +150
Limits
−40
−32
−5
−1
−2
Min.
150
−40
−32
120
0.3
−5
−
−
−
−
−
1
2
or larger.
∗
∗
Typ.
−0.2
150
1
2
20
−
−
−
−
−
−
Dimensions (Unit : mm)
2SA1515S
A(Pulse)
5
Max.
ROHM : SPT
EIAJ : SC-72
−0.5
−0.5
−0.5
390
A(DC)
30
−
−
−
−
(1) (2) (3)
Unit
1/3
W
V
V
V
C
C
4 0.2
+ −
MHz
Unit
2.5 +0.4
μA
μA
0.45
pF
V
V
V
V
−
−0.1
+0.15
−0.05
I
I
I
V
V
I
V
V
V
C
C
E
C
(1) Emitter
(2) Collector
(3) Base
CB
EB
CE
CE
CB
= − 50μA
= − 1mA
= − 50μA
/I
B
0.5
= − 20V
= − 4V
= − 3V, I
= − 5V, I
= − 10V, I
= − 500mA/ − 50mA
2 0.2
+ −
0.45
+0.15
−0.05
Conditions
C
E
= − 0.1A
= 50mA, f = 30MHz
E
= 0A, f = 1MHz
0.65Max.
2SB1237
(1)
ROHM : ATV
2.54 2.54
6.8 0.2
(2)
+ −
(3)
∗
∗
0.5 0.1
2010.04 - Rev.D
+ −
1.05
(1) Emitter
(2) Collector
(3) Base
2.5 0.2
+ −
0.45 0.1
+ −

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2SA1515S_10 Summary of contents

Page 1

Medium Power Transistor (32V,1A) 2SA1515S / 2SB1237 Features 1) Low V CE(sat). = 0.2V(Typ.) V CE(sat) = 500mA / 50mA Compliments 2SD1858 Structure Epitaxial planar type PNP silicon transistor Absolute maximum ratings (Ta=25C) Parameter ...

Page 2

FE Package Code Type h Basic ordering unit (pieces) FE 2SA1515S QR 2SB1237 QR h values are classified as follows : FE Item 120 to 270 180 to 390 FE ...

Page 3

Ta=25 C 100 0.01 0 100 1000 (s) TIME : t Fig.10 Transient thermal resistance (2SB1237) www.rohm.com ○ 2010 ROHM Co., Ltd. All rights reserved. c 3/3 Data Sheet ...

Page 4

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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