ZXMN2A01E6_06 ZETEX [Zetex Semiconductors], ZXMN2A01E6_06 Datasheet - Page 4

• Manufacturer Part Number: ZXMN2A01E6_06
• Description: 20V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

ELECTRICAL CHARACTERISTICS
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN2A01E6
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
(at T
SYMBOL
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
V SD
t rr
Q rr
A
= 25°C unless otherwise stated)
4
MIN.
0.7
20
TYP.
2.49
5.21
7.47
4.62
5.65
303
6.1
3.0
0.8
1.0
0.9
59
30
23
MAX. UNIT CONDITIONS.
0.225
0.12
0.95
100
1
V
µA
nA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
ISSUE 3 - FEBRUARY 2006
I D =250µA, V GS =0V
V DS =20V, V GS =0V
I
V GS =4.5V, I D =4A
V GS =2.5V, I D =1.5A
V DS =10V,I D =4A
V DS =15 V, V GS =0V,
f=1MHz
V DD =10V, I D =4A
R G =6.0Ω, V GS =5V
V DS =10V,V GS =4.5V,
I
T J =25°C, I S =3.2A,
V GS =0V
T J =25°C, I F = 4A,
di/dt= 100A/µs
V GS = 12V, V DS =0V
D
D
=4A
=250µA, V DS = V GS