M24L416256DA ESMT [Elite Semiconductor Memory Technology Inc.], M24L416256DA Datasheet - Page 4

• Manufacturer Part Number: M24L416256DA
• Description: 4-Mbit (256K x 16) Pseudo Static RAM
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

ESMT
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–55°C to +125°C
Supply Voltage to Ground Potential ................−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[6, 7, 8] .......................................−0.4V to 3.7V
DC Input Voltage[6, 7, 8] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
DC Electrical Characteristics (Over the Operating Range)
V
V
V
V
V
I
I
I
I
I
Capacitance[9]
Parameter
C
C
Thermal Resistance[9]
Parameter
θ
θ
Notes:
6.V
7.V
8.Overshoot and undershoot specifications are characterized and are not 100% tested.
9.Tested initially and after design or process changes that may affect these parameters.
Elite Semiconductor Memory Technology Inc.
Parameter
IX
OZ
CC
SB1
SB2
CC
OH
OL
IH
IL
IN
OUT
JA
JC
IH(MAX)
IL(MIN)
= –0.5V for pulse durations less than 20 ns.
= V
CC
Supply Voltage
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Leakage
Current
Output Leakage
Current
V
Supply Current
Automatic
Power-down
Current —CMOS
Inputs
Automatic
Power-down
Current —CMOS
Inputs
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
+ 0.5V for pulse durations less than 20 ns.
CC
Description
Operating
CE
CE
Description
Input Capacitance
Output Capacitance
1
1
Description
I
I
F = 0
GND ≤ V
GND ≤ V
Disabled
f = f
f = 1 MHz
0.2V, V
0.2V, f = f
Only),f = 0 ( OE , WE , BHE and
0.2V, V
CE
BLE )
CE
≤ 0.2V, f = 0, V
OH
OL
= 0.1 mA
1
1
= −0.1 mA
MAX
≥ V
≥ V
IN
IN
= 1/t
Test Conditions
MAX
≥ V
≥ V
CC
CC
IN
OUT
RC
(Address and Data
− 0.2V, CE2 ≤
− 0.2V, CE2 ≤
≤ Vcc
CC
CC
≤ Vcc, Output
CC
− 0.2V, V
− 0.2V or V
V
I
CMOS level
= 3.6V
OUT
CC
Test Conditions
T
V
A
CC
= 3.6V,
= 0 mA,
= 25°C, f = 1 MHz
= V
IN
CC(typ)
IN
Test
methods and procedures for measuring
thermal impedance, per EIA/JESD51.
≤
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Extended
Industrial
conditions
V
0.8 * V
CC
Min.
-0.4
2.7
-1
-1
– 0.4
Test Conditions
CC
Ambient Temperature (T
−25°C to +85°C
−40°C to +85°C
follow
1 for all speeds
14 for –55
14 for –60
08 for –70
Typ.[2]
-55, 60, 70
150
Max.
8
8
3.0
17
standard
Publication Date: Jul. 2008
Revision: 1.5
M24L416256DA
5 for all speeds
test
22 for –55
22 for –60
15 for –70
V
Unit
pF
pF
CC
Max.
A
0.62
250
3.6
0.4
)
+1
+1
40
+ 0.4
VFBGA
V
2.7V to 3.6V
2.7V to 3.6V
55
17
CC
4/15
Unit
mA
µA
µA
µA
µA
V
V
V
V
V
Unit
°C/W
°C/W