INA5001AP1 ISAHAYA [Isahaya Electronics Corporation], INA5001AP1 Datasheet

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INA5001AP1

Manufacturer Part Number
INA5001AP1
Description
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
Manufacturer
ISAHAYA [Isahaya Electronics Corporation]
Datasheet
MAXIMUM RATINGS
DESCRIPTION
silicon PNP epitaxial transistor,
It is designed for relay draive or Power supply application.
FEATURE
●Super mini package for easy mounting
● Low VCE(sat) V
● High collector current I
● High voltage V
APPLICATION
Relay drive, Power supply for audio equipment, VTR , etc
Symbol
INA5001AP1 is a super mini package resin sealed
.
V
V
V
ELECTRICAL CHARACTERISTICS
T
I
P
I
T
CBO
EBO
CEO
CM
stg
C
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain bandwidth product
Collector output capacitance
Parameter
C
j
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
CE(sat)
CEO
=-50V
Parameter
=-0.5 V max(@I
(Ta=25℃)
C
=-1A
C
=-500mA/I
ISAHAYA ELECTRONICS CORPORATION
-55~+150
(Ta=25℃)
Ratings
+150
B
-50
-50
500
-5
-1
-2
=-50mA)
V(BR)
V(BR)
V(BR)
Symbol
V
hFE
Cob
I
I
CE(sat)
CBO
EBO
fT
CBO
EBO
CEO
Unit
mW
I
I
I
V
V
V
I
V
V
V
V
V
A
A
C
C
E
C
CB
EB
CE
=-500mA,I
CE
CB
=-10μA,I
=-10μA,I
=-1mA,R
=-5V,I
=-4V,I
=-2V,I
=-50V,I
=-10V,I
C
E
C
=-0.1A
=500mA
E
BE
=0mA
OUTLINE DRAWING
E
=0mA,f=1MHz
C
B
E
=∞
=0mA
=-50mA
MARKING
=0mA
=0mA
Test conditions
TERMINAL CONNECTER
FOR LOW FREQUENCY AMPLIFY APPLICATION
①:BASE
②:EMITTER
③:COLLECTOR
E
電極接続
E: エミッタ
C: コレクタ
B: ベース
4.6 MAX
1.5
TYPE NAME
1.6
3.0
C
0.53
MAX
LOT №
〈SMALL-SIGNAL TRANSISTOR〉
SILICON PNP EPITAXIAL TYPE
B
A Z
0.48 MAX
JEITA:SC-62
JEDEC:SOT-89
W
Min
-50
-50
160
EIAJ : SC-62
JEDEC :
-5
INA5001AP1
マーキング
MARKING
hFE
Limits
Typ
120
12
1.5
0.4
Max
-0.1
-0.1
-0.5
380
Unit:mm
MHz
Unit
μA
μA
pF
V
V
V
V
-

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INA5001AP1 Summary of contents

Page 1

... DESCRIPTION INA5001AP1 is a super mini package resin sealed silicon PNP epitaxial transistor designed for relay draive or Power supply application. . FEATURE ●Super mini package for easy mounting ● Low VCE(sat) V =-0.5 V max(@I =-500mA/I C CE(sat) ● High collector current I =-1A C ● High voltage V ...

Page 2

... VCE=-4V 100 10 -0.8 -1 -1.2 -1000 Ta=25℃ -100 -10 -100 〈SMALL-SIGNAL TRANSISTOR〉 INA5001AP1 SILICON PNP EPITAXIAL TYPE COMMON EMITTER OUTPUT -5.0mA PcMAX=0.5W -4.5mA -4.0mA -3.5mA -3.0mA -2.5mA -2.0mA -1.5mA -0 -0.5 -1 -1.5 -2 COLLECTOR TO EMITTER VOLTAGE VCE (V) DC forward current gain VS. Collector current Ta=85℃ ...

Page 3

... ISAHAYA ELECTRONICS CORPORATION FOR LOW FREQUENCY AMPLIFY APPLICATION 100 Ta=25℃ VCE=- -0.1 100 1000 COLLECTOR TO BASE VOLTAGE VCB (V) PW=1msec 10msec 100msec 1sec -100 〈SMALL-SIGNAL TRANSISTOR〉 INA5001AP1 SILICON PNP EPITAXIAL TYPE COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE Ta=25℃ IE=0 f=1MHz -1 -10 -100 ...

Page 4

Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...

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