ADG621 Analog Devices, ADG621 Datasheet - Page 3

• Manufacturer Part Number: ADG621
• Description: CMOS +-5 V/ +5V 4 OHM DUAL SPST SWITCHES
• Manufacturer: Analog Devices

SINGLE SUPPLY
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature ranges are as follows: B Version, –40°C to +85°C.
Guaranteed by design, not subject to production test.
Analog Signal Range
On Resistance (R
On Resistance Match Between
On-Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
C
C
I
ON
OFF
DD
IN
S
D
D
Channels (∆R
I
(ADG623 Only)
, C
INL
(OFF)
, Digital Input Capacitance
(OFF)
S
or I
(ON)
INH
ON
ON
)
)
D
INL
1
INH
S
D
(OFF)
(OFF)
, I
(V
FLAT(ON)
S
DD
(ON)
= +5 V
2
BBM
)
10%, V
+25 C
7
10
0.5
0.75
0.5
± 0.01
± 0.25
± 0.01
± 0.25
± 0.01
± 0.25
0.005
2
120
210
50
75
70
6
–65
–90
230
20
20
70
0.001
SS
B Version
= 0 V, GND = 0 V. All specifications –40 C to +85 C unless otherwise noted.)
– 40 C to
+85 C
0 V to V
12.5
1
0.5
1
± 1
± 1
± 1
2.4
0.8
± 0.1
260
100
10
1.0
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
µA typ
µA max
Test Conditions/Comments
V
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
Test Circuit 2
V
Test Circuit 3
V
R
V
R
V
R
V
V
Test Circuit 6
R
Test Circuit 7
R
Test Circuit 9
R
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
Digital Inputs = 0 V or 5.5 V
DD
S
S
S
DD
S
S
S
IN
L
S
L
S
L
S1
S
L
L
L
DD
ADG621/ADG622/ADG623
= 0 V to 4.5 V, I
= 0 V to 4.5 V, I
= 1.5 V to 3.3 V, I
= 1 V/4.5 V, V
= 1 V/4.5 V, V
= V
= 3.3 V, Test Circuit 4
= 3.3 V, Test Circuit 4
= 0 V; R
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= V
= V
= 4.5 V, V
= 5.5 V
= 5.5 V
D
S2
INL
= 1 V/4.5 V,
= 3.3 V, Test Circuit 5
or V
S
= 0 Ω, C
L
L
L
L
L
L
= 5 pF, f = 1 MHz,
= 5 pF, f = 1 MHz,
= 5 pF, Test Circuit 8
SS
INH
= 35 pF
= 35 pF
= 35 pF,
= 0 V
D
D
S
S
= 4.5 V/1 V,
= 4.5 V/1 V,
= –10 mA,
= –10 mA
S
L
= –10 mA
= 1 nF,