AT29BV040A-25 ATMEL Corporation, AT29BV040A-25 Datasheet

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AT29BV040A-25

Manufacturer Part Number
AT29BV040A-25
Description
4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
Manufacturer
ATMEL Corporation
Datasheet

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Features
Description
The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times up to 250 ns, and a low 54 mW power dissipation.
When the device is deselected, the CMOS standby current is less than 20 A. The
device endurance is such that any sector can typically be written to in excess of
10,000 times. The programming algorithm is compatible with other devices in Atmel’s
2.7-volt-only Flash memories.
To allow for simple in-system reprogrammability, the AT29BV040A does not require
high input voltages for programming. The device can be operated with a single 2.7V
to 3.6V supply. Reading data out of the device is similar to reading from an EPROM.
Reprogramming the AT29BV040A is performed on a sector basis; 256-bytes of data
are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 256-bytes of data are captured
at microprocessor speed and internally latched, freeing the address and data bus for
other operations. Following the initiation of a program cycle, the device will automat-
ically erase the sector and then program the latched data using an internal control
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the
end of a program cycle has been detected, a new access for a read or program can
begin.
Pin Configurations
Pin Name Function
A0 - A18
CE
OE
WE
I/O0 - I/O7 Data Inputs/Outputs
NC
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Software Protected Programming
Fast Read Access Time - 250 ns
Low Power Dissipation
Sector Program Operation
Two 16 KB Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms Max.
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
15 mA Active Current
20 A CMOS Standby Current
Single Cycle Reprogram (Erase and Program)
2048 Sectors (256 bytes/sector)
Internal Address and Data Latches for 256-Bytes
Addresses
Chip Enable
Output Enable
Write Enable
No Connect
TSOP Top View
Type 1
AT29BV040A
AT29BV040A
4 Megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage
CMOS Flash
Memory
Preliminary
4-23
0383B

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AT29BV040A-25 Summary of contents

Page 1

... The device can be operated with a single 2.7V to 3.6V supply. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT29BV040A is performed on a sector basis; 256-bytes of data are loaded into the device and then simultaneously programmed. During a reprogram cycle, the address locations and 256-bytes of data are captured at microprocessor speed and internally latched, freeing the address and data bus for other operations ...

Page 2

... The device is programmed on a sector basis byte of data within the sector changed, data for the en- tire 256-byte sector must be loaded into the device. The AT29BV040A automatically does a sector erase prior to loading the data into the sector. An erase command is not required. ...

Page 3

... These two 16K memory sections are referred to as boot blocks . Secure code which will bring up a system can be contained in a boot block. The AT29BV040A blocks are located in the first 16K bytes of memory and the last 16K bytes of memory. The boot block programming lockout feature can therefore support systems that boot from the lower addresses of memory or the higher addresses ...

Page 4

... Standby Current TTL SB2 Active Current Input Low Voltage IL V Input High Voltage IH V Output Low Voltage OL V Output High Voltage OH AT29BV040A 4-26 AT29BV040A-25 0°C - 70°C -40°C - 85°C 2. ...

Page 5

... Input Test Waveforms and Measurement Level < Pin Capacitance ( MHz 25° OUT Note: 1. These parameters are characterized and not 100% tested. AT29BV040A-25 Min after the address specified from whichever occurs first pF). ...

Page 6

... Chip Select Hold Time CH t Write Pulse Width ( Data Set-up Time Data, OE Hold Time DH OEH t Write Pulse Width High WPH AC Byte Load Waveforms WE Controlled CE Controlled AT29BV040A 4-28 Min 10 100 0 0 200 100 10 200 (1, 2) Max Units ...

Page 7

... All bytes that are not loaded within the sector being programmed will be indeterminate. (1) Notes for software program code: WRITES ENABLED 1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex). 2. Data Protect state will be re-activated at end of program cycle. ENTER DATA (2) 3. 256-bytes of data PROTECT STATE AT29BV040A Max Units 150 s ns loaded ...

Page 8

... OEHP t Write Recovery Time WR Notes: 1. These parameters are characterized and not 100% tested. 2. See t spec in AC Read Characteristics. OE (1, 3) Toggle Bit Waveforms Notes: 1. Toggling either both OE and CE will operate toggle bit. AT29BV040A 4-30 (1, 2) Min 10 10 (2) 0 (1) Min Typ 10 10 ...

Page 9

... EXIT PRODUCT 1. Data Format: I/O7 - I/O0 (Hex); IDENTIFICATION Address Format: A14 - A0 (Hex). (4) 2. Lockout feature set on lower address boot block. MODE 3. Lockout feature set on higher address boot block AT29BV040A (1) LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 80 TO ADDRESS 5555 ...

Page 10

... Active Standby 250 15 0.02 15 0.05 350 15 0.02 15 0.05 32T 32 Lead, Thin Small Outline Package (TSOP) AT29BV040A 4-32 Ordering Code Package AT29BV040A-25TC 32T AT29BV040A-25TI 32T AT29BV040A-35TC 32T AT29BV040A-35TI 32T Package Type Operation Range Commercial ( Industrial (- Commercial ( Industrial (- ...

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