AM29F016 Advanced Micro Devices, AM29F016 Datasheet - Page 25

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AM29F016

Manufacturer Part Number
AM29F016
Description
16-Megabit (2/097/152 x 8-Bit) CMOS 5.0 Volt-only/ Sector Erase Flash Memory
Manufacturer
Advanced Micro Devices
Datasheet

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AC CHARACTERISTICS
Read-only Operations Characteristics
Notes:
1. Test Conditions (for -75):
Note:
C
C
t
t
t
t
t
t
t
Parameter Symbol
JEDEC Standard
AVAV
AVQV
ELQV
GLQV
EHQZ
GHQZ
AXQX
L
L
Output Load: 1 TTL gate and 30 pF
Input rise and fall times: 5 ns
Input pulse levels: 0.0 V to 3.0 V
Timing measurement reference level: 1.5 V input and
output
(for -75) = 30 pF including jig capacitance
(for all others) = 100 pF including jig capacitance
t
t
t
t
t
t
t
t
RC
ACC
CE
OE
DF
DF
OH
Ready
Read Cycle Time 4
Address to Output Delay
Chip Enable to Output Delay
Output Enable to Output Delay
Chip Enable to Output High Z
(Notes 3, 4)
Output Enable to Output High Z
(Notes 3, 4)
Output Hold Time From Addresses CE
or OE Whichever Occurs First
RESET Pin Low to Read Mode
4
Parameter Description
Device
Under
Test
Figure 7. Test Conditions
C
L
Am29F016
CE = V
OE = V
OE = V
Test Setup
2. Test Conditions (for all others):
3. Output driver disable time.
4. Not 100% tested.
or Equivalent
IL
IL
IL
Output Load: 1 TTL gate and 100 pF
Input rise and fall times: 20 ns
Input pulse levels: 0.45 V to 2.4 V
Timing measurement reference level: 0.8 V and 2.0 V
input and output
6.2 k
IN3064
Max
Max
Max
Max
Max
Max
Min
Min
-75
5.0 Volt
Speed Options (Notes 1 and 2)
70
70
70
40
20
20
20
0
2.7 k
-90
90
90
90
40
20
20
20
0
Diodes = IN3064
or Equivalent
-120
120
120
120
50
30
30
20
0
-150
150
150
150
55
35
35
20
0
18805D-11
Unit
ns
ns
ns
ns
ns
ns
ns
s
25

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