AM27C4096-55DCB Advanced Micro Devices, AM27C4096-55DCB Datasheet

AM27C4096-55DCB

Manufacturer Part Number

AM27C4096-55DCB

Description

512 Kilobit (64 K x 8-Bit) CMOS EPROM

Manufacturer

Advanced Micro Devices

Datasheet

1.AM27C4096-55DCB.pdf (12 pages)

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Am27C512

512 Kilobit (64 K x 8-Bit) CMOS EPROM

DISTINCTIVE CHARACTERISTICS

GENERAL DESCRIPTION

The Am27C512 is a 512-Kbit, ultraviolet erasable pro-

grammable read-only memory. It is organized as 64K

words by 8 bits per word, operates from a single +5 V

supply, has a static standby mode, and features fast

single address location programming. Products are

available in windowed ceramic DIP packages, as well

as plastic one time programmable (OTP) PDIP and

PLCC packages.

Data can be typically accessed in less than 55 ns, al-

lowing high-performance microprocessors to operate

without any WAIT states. The device offers separate

Output Enable (OE#) and Chip Enable (CE#) controls,

BLOCK DIAGRAM

Fast access time

— Speed options as fast as 55 ns

Low power consumption

— 20 µA typical CMOS standby current

JEDEC-approved pinout

Single +5 V power supply

100% Flashrite™ programming

— Typical programming time of 8 seconds

10% power supply tolerance standard

FINAL

Address

A0–A15

Inputs

OE#/V

CE#

Output Enable

Chip Enable

Prog Logic

Decoder

and

thus eliminating bus contention in a multiple bus micro-

processor system.

AMD’s CMOS process technology provides high

speed, low power, and high noise immunity. Typical

power consumption is only 80 mW in active mode, and

100 µW in standby mode.

All signals are TTL levels, including programming sig-

nals. Bit locations may be programmed singly, in

blocks, or at random. The device supports AMD’s

Flashrite programming algorithm (100 µs pulses), re-

sulting in a typical programming time of 8 seconds.

Latch-up protected to 100 mA from –1 V to

High noise immunity

Versatile features for simple interfacing

— Both CMOS and TTL input/output compatibility

— Two line control functions

Standard 28-pin DIP, PDIP, and 32-pin PLCC

packages

+ 1 V

Data Outputs

DQ0–DQ7

524,288

Buffers

Bit Cell

Output

Gating

Matrix

Publication# 08140

Issue Date: May 1998

Rev: I Amendment/0

08140I-1

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AM27C4096-55DCB Summary of contents

Page 1

FINAL Am27C512 512 Kilobit ( 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS Fast access time — Speed options as fast Low power consumption — 20 µA typical CMOS standby current JEDEC-approved pinout Single +5 V power supply ...

Page 2

PRODUCT SELECTOR GUIDE Family Part Number Speed Options V = 5.0 V 10% CC Max Access Time (ns) CE# (E#) Access (ns) OE# (G#) Access (ns) CONNECTION DIAGRAMS Top View DIP 1 28 A15 ...

Page 3

ORDERING INFORMATION UV EPROM Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: AM27C512 -55 D DEVICE NUMBER/DESCRIPTION Am27C512 512 Kilobit ( ...

Page 4

ORDERING INFORMATION OTP EPROM Products AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the following: AM27C512 -70 P Valid Combinations AM27C512- 5 ...

Page 5

FUNCTIONAL DESCRIPTION Device Erasure In order to clear all locations of their programmed con- tents, the device must be exposed to an ultraviolet light source. A dosage seconds/cm completely erase the device. This dosage can be ob- ...

Page 6

READ line from the system control bus. This assures that all deselected memory devices are in their low-power standby mode and that the out- put pins are only ...

Page 7

ABSOLUTE MAXIMUM RATINGS Storage Temperature OTP Products – +125 C All Other Products . . . . . . . . ...

Page 8

DC CHARACTERISTICS over operating range (unless otherwise specified) Parameter Symbol Parameter Description V Output HIGH Voltage OH V Output LOW Voltage OL V Input HIGH Voltage IH V Input LOW Voltage IL I Input Load Current LI I Output Leakage ...

Page 9

TEST CONDITIONS Device Under Test C L 6.2 k Note: Diodes are IN3064 or equivalents. Figure 3. Test Setup SWITCHING TEST WAVEFORM 3 V 1.5 V Test Points 0 V Input Note: For pF. L KEY TO ...

Page 10

AC CHARACTERISTICS Parameter Symbols JEDEC Standard Description t t Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable to Output Delay CE GLQV OE Chip Enable High or ...

Page 11

PHYSICAL DIMENSIONS* CDV028—28-Pin Ceramic Dual In-Line Package, UV Lens (measured in inches) DATUM D CENTER PLANE 1 INDEX AND TERMINAL NO. 1 I.D. AREA BASE PLANE SEATING PLANE .005 MIN .045 .065 .014 .026 * For reference only. BSC is ...

Page 12

... Trademarks Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are trademarks of Advanced Micro Devices, Inc. Flashrite is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies. ...

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