W49F102P45 Winbond, W49F102P45 Datasheet

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W49F102P45

Manufacturer Part Number
W49F102P45
Description
64K X 16 CMOS FLASH MEMORY
Manufacturer
Winbond
Datasheet
GENERAL DESCRIPTION
The W49F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K
can be programmed and erased in-system with a standard 5V power supply. A 12-volt V
required. The unique cell architecture of the W49F102 results in fast program/erase operations with
extremely low current consumption (compared to other comparable 5-volt flash memory products). The
device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt operations:
Fast Program operation:
Fast Erase operation: 100 mS (typ.)
Fast Read access time: 40/45 nS
Endurance: 10K cycles (typ.)
Ten-year data retention
Hardware data protection
8K word Boot Block with Lockout protection
5-volt Read
5-volt Erase
5-volt Program
Word-by-Word programming: 50 S (max.)
64K
- 1 -
16 CMOS FLASH MEMORY
Low power consumption
Automatic program and erase timing with
internal V
End of program or erase detection
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 40-pin TSOP and 44-pin
PLCC
Active current: 25 mA (typ.)
Standby current: 20 A (typ.)
Toggle bit
Data polling
PP
Publication Release Date: October 2000
generation
16 bits. The device
W49F102
Revision A3
PP
is not

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W49F102P45 Summary of contents

Page 1

... GENERAL DESCRIPTION The W49F102 is a 1-megabit, 5-volt only CMOS flash memory organized as 64K can be programmed and erased in-system with a standard 5V power supply. A 12-volt V required. The unique cell architecture of the W49F102 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers ...

Page 2

PIN CONFIGURATIONS A9 1 A10 2 A11 3 A12 4 A13 5 A14 6 A15 40-pin 9 WE TSOP DQ15 13 DQ14 14 DQ13 15 DQ12 16 DQ11 17 DQ10 ...

Page 3

FUNCTIONAL DESCRIPTION Read Mode The read operation of the W49F102 is controlled by CE and OE, both of which have to be low for the host to obtain data from the outputs used for device selection. When CE ...

Page 4

Program Operation The W49F102 is programmed on a word-by-word basis. Program operation can only change logical data "1" to logical data "0" The erase operation (changed entire data in main memory and/or boot block from "0" to "1" is needed ...

Page 5

TABLE OF OPERATING MODES Operating Mode Selection (V = 12V 5%) HH MODE CE Read V IL Write V IL Standby V IH Write Inhibit X X Output Disable X Product TABLE OF COMMAND DEFINITION ...

Page 6

Command Codes for Word Program WORD SEQUENCE 0 Write 1 Write 2 Write 3 Write Word Program Flow Chart Notes for software program code: Data Format: DQ15 DQ0 (Hex Don't Care Address Format: A14 A0 (Hex) ADDRESS 5555H ...

Page 7

Command Codes for Chip Erase BYTE SEQUENCE 1 Write 2 Write 3 Write 4 Write 5 Write 6 Write Chip Erase Acquisition Flow Notes for chip erase: Data Format: DQ15-DQ8: Don't Care; DQ7 DQ0 (Hex) Address Format: A14 A0 (Hex) ...

Page 8

Command Codes for Main Memory Erase BYTE SEQUENCE 1 Write 2 Write 3 Write 4 Write 5 Write 6 Write Main Memory Erase Acquisition Flow Notes for chip erase: Data Format: DQ15-DQ8: Don't Care; DQ7 DQ0 (Hex) Address Format: A14 ...

Page 9

Command Codes for Product Identification and Boot Block Lockout Detection BYTE PRODUCT IDENTIFICATION/BOOT BLOCK LOCKOUT DETECTION ENTRY SEQUENCE ADDRESS 1 Write 5555 2 Write 2AAA 3 Write 5555 Software Product Identification and Boot Block Lockout Detection Acquisition Flow Product Identification ...

Page 10

Command Codes for Boot Block Lockout Enable BYTE SEQUENCE 1 Write 2 Write 3 Write 4 Write 5 Write 6 Write Boot Block Lockout Enable Acquisition Flow Notes for boot block lockout enable: Data Format: DQ15-DQ8 Don't Care), DQ7 DQ0 ...

Page 11

DC CHARACTERISTICS Absolute Maximum Ratings PARAMETER Power Supply Voltage Operating Temperature Storage Temperature D.C. Voltage on Any Pin to Ground Potential except OE Transient Voltage (< Any Pin to Ground Potential Voltage on OE ...

Page 12

Power-up Timing PARAMETER Power-up to Read Operation Power-up to Write Operation CAPACITANCE (V = 5.0V MHz PARAMETER I/O Pin Capacitance Input Capacitance AC CHARACTERISTICS AC Test Conditions PARAMETER Input Pulse Levels ...

Page 13

AC Characteristics, continued Read Cycle Timing Parameters (V = 5.0V 5 for PARAMETER Read Cycle Time Chip Enable Access Time Address Access Time Output Enable Access Time CE Low to Active Output ...

Page 14

AC Characteristics, continued Data Polling and Toggle Bit Timing Parameters PARAMETER OE to Data Polling Output Delay CE to Data Polling Output Delay OE to Toggle Bit Output Delay CE to Toggle Bit Output Delay TIMING WAVEFORMS Read Cycle Timing ...

Page 15

Timing Waveforms, continued Controlled Command Write Cycle Timing Diagram WE Address A15 DQ15-0 Controlled Command Write Cycle Timing Diagram CE Address A15 DQ15 OES ...

Page 16

Timing Waveforms, continued Program Cycle Timing Diagram Address A15-0 DQ15 Polling Timing Diagram DATA Address A15 DQ7/DQ15 Word Program Cycle 2AAA 5555 Address 5555 WPH T WP Word 1 Word ...

Page 17

Timing Waveforms, continued Toggle Bit Timing Diagram Address A15 DQ6/DQ14 Boot Block Lockout Enable Timing Diagram Address A15-0 5555 DQ15 OEH Six-word code for Boot Block Lockout Feature ...

Page 18

Timing Waveforms, continued Chip Erase Timing Diagram Address A15-0 5555 DQ15 Main Memory Erase Timing Diagram Address A15-0 5555 DQ15-0 XXAA SW0 Six-word code for 5V-only software chip erase 5555 5555 2AAA 2AAA ...

Page 19

... W49F102Q40 40 W49F102Q45 45 W49F102P40 40 W49F102P45 45 Notes: 1. Winbond reserves the right to make changes to its products without prior notice. 2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in applications where personal injury might occur as a consequence of product failure. POWER ...

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... E L 0.090 0.100 2.54 2.79 0.110 2.29 y 0.004 0.10 Notes: 1. Dimension D & not include interlead flash. 2. Dimension b1 does not include dambar protrusion/intrusion. 3. Controlling dimension: Inches 4. General appearance spec. should be based on final visual inspection spec. Dimension in Inches Dimension in mm Symbol Min. Nom. Max. Min. Nom. Max. ...

Page 21

... TEL: 852 -27513100 FAX: 852 -27552064 FAX: 852 -27552064 - 21 - W49F102 DESCRIPTION for 40, 45, 50, 55 Winbond Electronics North America Corp. Winbond Electronics North America Corp. Winbond Memory Lab. Winbond Memory Lab. Winbond Microelectronics Corp. Winbond Microelectronics Corp. Winbond Systems Lab. Winbond Systems Lab. ...

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