K9F5608UOC Samsung, K9F5608UOC Datasheet

K9F5608UOC

Manufacturer Part Number

K9F5608UOC

Description

Manufacturer

Samsung

Datasheets

1.K9F5608Q0C-D.pdf (41 pages)

2.K9F5608UOC.pdf (35 pages)

3.K9F5608UOC.pdf (41 pages)

Specifications of K9F5608UOC

Date_code

06+

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Note : For more detailed features and specifications including FAQ, please refer to Samsung’ s Flash web site.

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

Document Title

Revision History

K9F5608Q0C

K9F5608D0C

K9F5608U0C

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

Revision No.

32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm

0.0

1.0

2.0

2.1

2.2

2.3

2.4

2.5

History

Initial issue.

1.Pin assignment of TBGA dummy ball is changed.

(before) DNU --> (after) N.C

2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36)

3. Add the data protection Vcc guidence for 1.8V device - below about

4. Add the specification of Block Lock scheme.(Page 32~35)

5. Pin assignment of TBGA A3 ball is changed.

(before) N.C --> (after) Vss

6. Pin assignment of WSOP #38 pin is changed.

(before) LOCKPRE --> (after) N.C

1. The Maximum operating current is changed.

Program : Icc2 20mA-->25mA

Erase : Icc3 20mA-->25mA

The min. Vcc value 1.8V devices is changed.

K9F56XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V

Pb-free Package is added.

K9F5608U0C-FCB0,FIB0

K9F5608Q0C-HCB0,HIB0

K9F5616U0C-HCB0,HIB0

K9F5616U0C-PCB0,PIB0

K9F5616Q0C-HCB0,HIB0

K9F5608U0C-HCB0,HIB0

K9F5608U0C-PCB0,PIB0

Errata is added.(Front Page)-K9F56XXQ0C

Specification

Relaxed value

New definition of the number of invalid blocks is added.

(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb

memory

1. The guidence of LOCKPRE pin usage is changed.

Don’ t leave it N.C. Not using LOCK MECHANISM & POWER-ON AUTO-

READ, connect it Vss.(Before)

--> Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect

it Vss or leave it N.C(After)

2. 2.65V device is added.

3.Note is added.

(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

durations of 20 ns or less.)

1.1V. (Page 37)

K9F5616Q0C

K9F5616D0C

K9F5616U0C

space.)

tWC tWH tWP tRC tREH tRP tREA tCEA

Draft Date

Apr. 25th 2002

Dec.14th 2002

Jan. 17th 2003

Mar. 5th 2003

Mar. 13rd 2003

Mar. 26th 2003

Apr. 4th 2003

Jun. 30th 2003

FLASH MEMORY

Remark

Preliminary

Advance

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