K6T1008C2C-GB70

Manufacturer Part NumberK6T1008C2C-GB70
ManufacturerSamsung
K6T1008C2C-GB70 datasheets
 


Specifications of K6T1008C2C-GB70

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K6T1008C2C Family
Document Title
128K x8 bit Low Power CMOS Static RAM
Revision History
Revision No.
History
0.0
Initial draft
0.1
First revision
- Seperate read and write at I
I
I
Read : 15mA, Write : 35mA
CC =
CC1
1.0
Finalized
- Add 70ns speed bin for commercial product and 85ns speed
bin for industrial.
2.0
Revised
- Improved operating current
Add typical value.
I
Read : 15mA
CC
I
: 90mA
60mA
CC2
- Speed bin change
Remove 45ns from commercial part
Remove 55ns and 100ns from industrial part.
The attached data sheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
, I
CC
CC1
10mA(Remove write current)
1
CMOS SRAM
Draft Date
Remark
November 22, 1995
Design target
April 15, 1996
Preliminary
September 5, 1996
Final
November 5, 1997
Final
Revision 2.0
November 1997