K6T0808V1D-TD70 Samsung, K6T0808V1D-TD70 Datasheet

K6T0808V1D-TD70

Manufacturer Part Number

K6T0808V1D-TD70

Description

Manufacturer

Samsung

Datasheet

1.K6T0808V1D-TD70.pdf (9 pages)

Specifications of K6T0808V1D-TD70

Case

TSOP32

Date_code

2006+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

K6T0808V1D-TD70

Manufacturer:

SAMSUNG

Quantity:

6 100

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

K6T0808V1D-TD70

Manufacturer:

SAMSUNG

Quantity:

6 100

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Document Title

Revision History

products. SAMSUNG Electronics will answer your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

K6T0808V1D, K6T0808U1D Family

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and

32Kx8 bit Low Power and Low Voltage CMOS Static RAM

Revision No.

1.01

0.0

1.0

History

Initial draft

Finalize

Errata correction

- Add 70ns part in KM62U256D Family

- Show I

- Seperate I

- Improved standby current(I

- Improved V

- Improved power dissipation: 0.7W 1W

- Removed ’ T TL Compatible’ from Features

- Errata correction from 4.5V to 3.0/2.7V for

Commercial part: 10 A 5 A

DATA RETENTION WAVE FORM

Extended and Industrial part: 20 A 5 A

CC1

= 2mA

= 5mA I

read only, and increased value

CC1

(Min.): 0.4V 0.6V

CC1

read and write

Read = 5mA

Read = 5mA, I

SB1

)

CC1

Write = 10mA

Draft Data

April 1, 1997

November 12, 1997

October 24, 2001

CMOS SRAM

Revision 1.01

October 2001

Remark

Preliminary

Final

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