K4T1G164QE-HCF7

Manufacturer Part NumberK4T1G164QE-HCF7
ManufacturerSamsung
K4T1G164QE-HCF7 datasheet
 

Specifications of K4T1G164QE-HCF7

Date_code10+  
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
Page 31
32
Page 32
33
Page 33
34
Page 34
35
Page 35
36
Page 36
37
Page 37
38
Page 38
39
Page 39
40
Page 40
41
42
43
44
45
Page 31/45

Download datasheet (2Mb)Embed
PrevNext
K4T1G044QE
K4T1G084QE
K4T1G164QE
V
DDQ
V
(AC)min
DQS
IH
V
(DC)min
IH
Note1
V
(DC)
REF
V
(DC)max
IL
V
(AC)max
IL
V
SS
V
DDQ
V
(AC)min
IH
V
(DC)min
IH
V
(DC)
REF
V
(DC)max
IL
V
(AC)max
IL
V
SS
Hold Slew Rate
Rising Signal
Note : DQS signal must be monotonic between V
Figure 10 - IIIustration of nominal slew rate for tDH (single-ended DQS)
tDH
tDS
dc to V
REF
region
nominal
dc to V
REF
slew rate
region
∆TR
V
(DC) - V
(DC)max
REF
IL
Hold Slew Rate
=
∆TR
Falling Signal
(DC)max and V
IL
31 of 45
DDR2 SDRAM
tDS
tDH
nominal
slew rate
∆TF
V
(DC)min - V
(DC)
IH
REF
=
∆TF
(DC)min.
IH
Rev. 1.1 December 2008