IRLL024NTR International Rectifier Corp., IRLL024NTR Datasheet

IRLL024NTR

Manufacturer Part Number

IRLL024NTR

Description

Manufacturer

International Rectifier Corp.

Datasheet

1.IRLL024N.pdf (8 pages)

Specifications of IRLL024NTR

Case

SOT-223

Date_code

08+

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Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application.

Absolute Maximum Ratings

Thermal Resistance

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

www.irf.com

dv/dt

@ T

Surface Mount

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching

Fully Avalanche Rated

STG

= 25°C

= 70°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy*

Peak Diode Recovery dv/dt ƒ

Junction and Storage Temperature Range

Junction-to-Amb. (PCB Mount, steady state)*

Junction-to-Amb. (PCB Mount, steady state)**

Parameter

@ 10V**

@ 10V*

Typ.

HEXFET

-55 to + 150

S O T -2 2 3

Max.

± 16

120

4.4

3.1

2.5

2.1

1.0

8.3

5.0

3.1

0.1

IRLL024N

Max.

DS(on)

Power MOSFET

120

DSS

= 3.1A

= 0.065

= 55V

PD - 91895

Units

mW/°C

Units

°C/W

V/ns

°C

6/15/99

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