IRF3415STRL

Manufacturer Part NumberIRF3415STRL
ManufacturerInternational Rectifier Corp.
IRF3415STRL datasheets
 


Specifications of IRF3415STRL

Date_code08+  
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Advanced Process Technology
Surface Mount (IRF3415S)
Low-profile through-hole (IRF3415L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area.
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
2
The D
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
2
D
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3415L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
I
Pulsed Drain Current
DM
P
@T
= 25°C
Power Dissipation
D
A
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Junction-to-Ambient ( PCB Mounted,steady-state)**
JA
IRF3415S/L
HEXFET
D
G
S
This
2
D P ak
Max.
@ 10V
GS
@ 10V
GS
150
200
± 20
590
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
PD - 91509C
®
Power MOSFET
V
= 150V
DSS
R
= 0.042
DS(on)
I
= 43A
D
T O -26 2
Units
43
30
A
3.8
W
W
1.3
W/°C
V
mJ
22
A
20
mJ
5.0
V/ns
°C
Max.
Units
0.75
°C/W
40
5/13/98