IRF1404ZS International Rectifier Corp., IRF1404ZS Datasheet

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IRF1404ZS

Manufacturer Part Number
IRF1404ZS
Description
Manufacturer
International Rectifier Corp.
Datasheets

Specifications of IRF1404ZS

Case
D2-pak
Date_code
08+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1404ZSPBF
Manufacturer:
AMD
Quantity:
4 219
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
Features
Description
Absolute Maximum Ratings
I
I
I
I
P
V
E
E
I
E
T
T
Thermal Resistance
R
R
R
R
www.irf.com
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
(Tested )
C
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Continuous Drain Current, V
= 25°C Power Dissipation
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount)
Power MOSFET utilizes the latest
Ù
Parameter
Parameter
i
AUTOMOTIVE MOSFET
GS
GS
GS
g
@ 10V
@ 10V
@ 10V
d
j
i
i
(Silicon Limited)
(Package Limited)
h
TO-220AB
G
IRF1404Z
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
0.50
–––
–––
–––
10 lbf
S
D
IRF1404ZS
-55 to + 175
D
y
Max.
in (1.1N
190
2
130
750
220
± 20
320
480
1.5
75
Pak
®
R
Power MOSFET
DS(on)
y
V
m)
Max.
0.65
DSS
I
–––
IRF1404ZS
62
40
IRF1404ZL
D
IRF1404Z
= 75A
PD - 94634A
IRF1404ZL
= 3.7mΩ
= 40V
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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