AT45DB161DSU ATMEL Corporation, AT45DB161DSU Datasheet

AT45DB161DSU

Manufacturer Part Number

AT45DB161DSU

Description

Manufacturer

ATMEL Corporation

Datasheet

1.AT45DB161DSU.pdf (53 pages)

Specifications of AT45DB161DSU

Case

SOP

Date_code

07+

Current page: 1 of 53
Download datasheet (2Mb)

Features

•

1. Description

The AT45DB161D is a 2.5-volt or 2.7-volt, serial-interface sequential access Flash

memory ideally suited for a wide variety of digital voice-, image-, program code- and

data-storage applications. The AT45DB161D supports RapidS serial interface for

applications requiring very high speed operations. RapidS serial interface is SPI com-

patible for frequencies up to 66 MHz. Its 17,301,504 bits of memory are organized as

4,096 pages of 512 bytes or 528 bytes each. In addition to the main memory, the

AT45DB161D also contains two SRAM buffers of 512/528 bytes each. The buffers

allow the receiving of data while a page in the main Memory is being reprogrammed,

as well as writing a continuous data stream. EEPROM emulation (bit or byte alterabil-

ity) is easily handled with a self-contained three step read-modify-write operation.

Unlike conventional Flash memories that are accessed randomly with multiple

Single 2.5V - 3.6V or 2.7V - 3.6V Supply

RapidS

User Configurable Page Size

Page Program Operation

Flexible Erase Options

Two SRAM Data Buffers (512/528 Bytes)

Continuous Read Capability through Entire Array

Low-power Dissipation

Hardware and Software Data Protection Features

Sector Lockdown for Secure Code and Data Storage

Security: 128-byte Security Register

JEDEC Standard Manufacturer and Device ID Read

100,000 Program/Erase Cycles Per Page Minimum

Data Retention – 20 Years

Industrial Temperature Range

Green (Pb/Halide-free/RoHS Compliant) Packaging Options

– SPI Compatible Modes 0 and 3

– 512 Bytes per Page

– 528 Bytes per Page

– Intelligent Programming Operation

– 4,096 Pages (512/528 Bytes/Page) Main Memory

– Page Erase (512 Bytes)

– Block Erase (4 Kbytes)

– Sector Erase (128 Kbytes)

– Chip Erase (16 Mbits)

– Allows Receiving of Data while Reprogramming the Flash Array

– Ideal for Code Shadowing Applications

– 7 mA Active Read Current Typical

– 25 µA Standby Current Typical

– 9 µA Deep Power Down Typical

– Individual Sector

– 64-byte User Programmable Space

– Unique 64-byte Device Identifier

™

Serial Interface: 66 MHz Maximum Clock Frequency

16-megabit

2.5-volt or

2.7-volt

DataFlash

AT45DB161D

3500H–DFLASH–09/06

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