12A01S Sanyo Semiconductor Corporation, 12A01S Datasheet

12A01S

Manufacturer Part Number

12A01S

Description

Manufacturer

Sanyo Semiconductor Corporation

Datasheets

1.12A01S.pdf (4 pages)

2.12A01S.pdf (4 pages)

Specifications of 12A01S

Date_code

05+

Packing_info

SOT-523

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

12A01SS-TL-E

Manufacturer:

SANYO/三洋

Quantity:

20 000

Current page: 1 of 4
Download datasheet (29Kb)

Ordering number : ENN7479

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : XP

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

•

Low-frequency Amplifier, muting circuit.

Large current capacitance.

Low collector-to-emitter saturation voltage (resistance).

R CE (sat) typ.=0.57 [I C =0.5A, I B =25mA].

Ultrasmall package facilitates miniaturization in end

products.

Small ON-resistance (Ron).

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

Symbol

V CBO

V CEO

V EBO

I CBO

I EBO

Tstg

h FE

I CP

P C

I C

f T

General-Purpose Amplifier Applications

Mounted on a glass-epoxy board (20 30 1.6mm)

V CB =--12V, I E =0

V EB =- -4V, I C =0

V CE =--2V, I C =--10mA

V CE =--2V, I C =--50mA

12A01S

Conditions

Package Dimensions

unit : mm

2106A

Conditions

PNP Epitaxial Planar Silicon Transistor

0.5

1.6

0.3

0.5

0.2

[12A01S]

min

Low-Frequency

300

O2203 TS IM TA-100567

1 : Base

2 : Emitter

3 : Collector

SANYO : SMCP

0.1

0.75

Ratings

0.6

typ

Ratings

490

0 to 0.1

Continued on next page.

--55 to +150

12A01S

max

--500

--1.0

--0.1

200

150

700

--15

--12

--5

No.7479-1/4

MHz

Unit

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