CBCX69-16TR Central Semiconductor, CBCX69-16TR Datasheet

CBCX69-16TR

Manufacturer Part Number

CBCX69-16TR

Description

Manufacturer

Central Semiconductor

Datasheet

1.CBCX69-16TR.pdf (2 pages)

Specifications of CBCX69-16TR

Date_code

05+

Packing_info

SOT-89

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MAXIMUM RATINGS: (T A =25°C)

Collector-Emitter Voltage

Emitter-Base Voltage

Continous Collector Current

Peak Collector Current

Continuous Base Current

Peak Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

I CBO

I EBO

BV CBO

BV CEO

BV EBO

V CE(SAT)

V BE(ON)

h FE

f T

SMALL SIGNAL TRANSISTORS

COMPLEMENTARY SILICON

CBCX68 SERIES NPN

CBCX69 SERIES PNP

SURFACE MOUNT

TEST CONDITIONS

V CB =25V

V CB =25V, T A =150°C

V EB =5.0V

I C =10μA

I C =10mA

I E =10μA

I C =1.0A, I B =100mA

V CE =10V, I C =5.0mA

V CE =1.0V, I C =1.0A

V CE =10V, I C =5.0mA

V CE =1.0V, I C =500mA (CBCX68, CBCX69)

V CE =1.0V, I C =500mA (CBCX68-16, CBCX69-16)

V CE =1.0V, I C =500mA (CBCX68-25, CBCX69-25)

V CE =1.0V, I C =1.0A

V CE =5.0V, I C =10mA, f=20MHz

SOT-89 CASE

SYMBOL

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBCX68 and

CBCX69 series types are complementary silicon

transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount package,

designed for applications requiring high current

capability.

MARKING: FULL PART NUMBER

T J , T stg

V CEO

V CES

V EBO

Θ JA

I CM

I BM

P D

I C

I B

MIN

100

160

5.0

-65 to +150

100

200

104

5.0

1.0

2.0

1.2

TYP

0.6

w w w. c e n t r a l s e m i . c o m

R11 (23-February 2012)

MAX

100

375

250

400

0.5

1.0

UNITS

°C/W

MHz

°C

μA

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