CMPD4448TR Central Semiconductor, CMPD4448TR Datasheet

CMPD4448TR

Manufacturer Part Number

CMPD4448TR

Description

Manufacturer

Central Semiconductor

Datasheet

1.CMPD4448TR.pdf (2 pages)

Specifications of CMPD4448TR

Date_code

05+

Packing_info

SOT-23

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MAXIMUM RATINGS: (T A =25°C)

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Forward Surge Current, tp=1 ms

Forward Surge Current, tp=1 s

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

BV R

I R

V F

C T

t rr

SILICON SWITCHING DIODE

SURFACE MOUNT

SOT-23 CASE

TEST CONDITIONS

I R =5.0µA

I R =100µA

V R =20V

I F =5.0mA

I F =100mA

V R =0, f=1.0MHz

I R =I F =10mA, R L =100Ω, Rec. to 1.0mA

HIGH SPEED

CMPD4448

SYMBOL

V R

V RRM

I F

I FRM

I FSM

P D

T J ,T stg

Θ JA

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD4448

type is an ultra-high speed silicon switching diode

manufactured by the epitaxial planar process, in

an epoxy molded surface mount package,

designed for high speed switching applications.

MARKING CODE: AAD

Semiconductor Corp.

0.62

MIN

100

-65 to +150

100

250

500

350

357

4.0

1.0

MAX

0.72

1.0

4.0

R6 (2-December 2003)

UNITS

°C/W

°C

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