CMPT5179TR Central Semiconductor, CMPT5179TR Datasheet

CMPT5179TR

Manufacturer Part Number

CMPT5179TR

Description

Manufacturer

Central Semiconductor

Datasheet

1.CMPT5179TR.pdf (2 pages)

Specifications of CMPT5179TR

Date_code

05+

Packing_info

SOT-23

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MAXIMUM RATINGS: (T A =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

I CBO

BV CBO

BV CEO

BV EBO

V CE(SAT)

V BE(SAT)

h FE

f T

C cb

h fe

G pe

NPN SILICON RF TRANSISTOR

TEST CONDITIONS

V CB =15V

I C =10μA

I C =3.0mA

I E =10μA

I C =10mA, I B =1.0mA

V CE =1.0V, I C =3.0mA

V CE =6.0V, I C =5.0mA, f=100MHz

V CB =10V, I E =0, f=1.0MHz

V CE =6.0V, I C =2.0mA, f=1.0kHz

V CE =6.0V, I C =5.0mA, f=200MHz

V CE =6.0V, I C =1.5mA, R S =50Ω, f=200MHz

SOT-23 CASE

CMPT5179

SYMBOL

T J , T stg

V CBO

V CEO

V EBO

Θ JA

P D

I C

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5179

type

manufactured by the epitaxial planar process,

epoxy molded in a surface mount package,

designed for low noise, high frequency amplifier

and high output oscillator applications.

MARKING CODE: C7H

Central

Semiconductor Corp.

MIN

900

2.5

-65 to +150

NPN

350

357

2.5

1450

TYP

4.5

silicon

R5 (4-February 2008)

MAX

0.4

1.0

UNITS

°C/W

°C

UNITS

MHz

transistor

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