AM28F010150PC Advanced Micro Devices, AM28F010150PC Datasheet

AM28F010150PC

Manufacturer Part Number

AM28F010150PC

Description

DIP32

Manufacturer

Advanced Micro Devices

Datasheet

1.AM28F010150EC.pdf (35 pages)

Specifications of AM28F010150PC

Date_code

05+

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Am28F010

1 Megabit (128 K x 8-Bit)

CMOS 12.0 Volt, Bulk Erase Flash Memory

DISTINCTIVE CHARACTERISTICS

GENERAL DESCRIPTION

The Am28F010 is a 1 Megabit Flash memory orga-

nized as 128 Kbytes of 8 bits each. AMD’s Flash mem-

ories offer the most cost-effective and reliable read/

write non-volatile random access memor y. The

Am28F010 is packaged in 32-pin PDIP, PLCC, and

TSOP versions. It is designed to be reprogrammed

and erased in-system or in standard EPROM pro-

grammers. The Am28F010 is erased when shipped

from the factory.

The standard Am28F010 offers access times as fast as

70 ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the Am28F010 has separate chip enable (CE#) and

output enable (OE#) controls.

AMD’s Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

Am28F010 uses a command register to manage this

functionality, while maintaining a JEDEC Flash Stan-

dard 32-pin pinout. The command register allows for

100% TTL level control inputs and fixed power supply

levels during erase and programming, while maintain-

ing maximum EPROM compatibility.

Publication# 11559

Issue Date: January 1998

High performance

— 70 ns maximum access time

CMOS Low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

Compatible with JEDEC-standard byte-wide

32-Pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

10,000 write/erase cycles minimum

Write and erase voltage 12.0 V 5%

Latch-up protected to 100 mA

from –1 V to V

FINAL

Rev: H Amendment/+2

+1 V

AMD’s Flash technology reliably stores memory con-

tents even after 10,000 erase and program cycles. The

AMD cell is designed to optimize the erase and pro-

gramming mechanisms. In addition, the combination of

advanced tunnel oxide processing and low internal

electric fields for erase and programming operations

produces reliable cycling. The Am28F010 uses a

12.0 V 5% V

Flasherase and Flashrite algorithms.

The highest degree of latch-up protection is achieved

with AMD’s proprietary non-epi process. Latch-up pro-

tection is provided for stresses up to 100 milliamps on

address and data pins from –1 V to V

The Am28F010 is byte programmable using 10 ms pro-

gramming pulses in accordance with AMD’s Flashrite

programming algorithm. The typical room temperature

programming time of the Am28F010 is two seconds.

The entire chip is bulk erased using 10 ms erase pulses

according to AMD’s Flasherase alrogithm. Typical era-

sure at room temperature is accomplished in less than

one second. The windowed package and the 15–20

Flasherase™ Electrical Bulk Chip-Erase

— One second typical chip-erase

Flashrite™ Programming

— 10 µs typical byte-program

— Two seconds typical chip program

Command register architecture for

microprocessor/microcontroller compatible

write interface

On-chip address and data latches

Advanced CMOS flash memory technology

— Low cost single transistor memory cell

Automatic write/erase pulse stop timer

high voltage input to perform the

+1 V.

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