AT28C6412PI ATMEL Corporation, AT28C6412PI Datasheet
Manufacturer Part Number
Specifications of AT28C6412PI
Fast Read Access Time – 120 ns
Fast Byte Write – 200 µs
Self-timed Byte Write Cycle
– Internal Address and Data Latches
– Internal Control Timer
– Automatic Clear Before Write
Direct Microprocessor Control
– READY/BUSY Open Drain Output
– DATA Polling
– 30 mA Active Current
– 100 µA CMOS Standby Current
– Endurance: 10
– Data Retention: 10 Years
5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-Free) Packaging Option
The AT28C64E is a low-power, high-performance 8,192 words by 8-bit nonvolatile
electrically erasable and programmable read-only memory with popular, easy-to-use
features. The device is manufactured with Atmel’s reliable nonvolatile technology.
The AT28C64E is accessed like a Static RAM for the read or write cycles without the
need for external components. During a byte write, the address and data are latched
internally, freeing the microprocessor address and data bus for other operations. Fol-
lowing the initiation of a write cycle, the device will go to a busy state and
automatically clear and write the latched data using an internal control timer. The
device includes two methods for detecting the end of a write cycle, level detection of
RDY/BUSY (unless pin 1 is N.C.) and DATA Polling of I/O
cycle has been detected, a new access for a read or write can begin.
The CMOS technology offers fast access times of 120 ns at low power dissipation.
When the chip is deselected, the standby current is less than 100 µA.
Atmel’s AT28C64E has additional features to ensure high quality and manufacturabil-
ity. The device utilizes error correction internally for extended endurance and for
improved data retention characteristics. An extra 32 bytes of EEPROM are available
for device identification or tracking.
64K (8K x 8)
. Once the end of a write