BT152600R Philips Semiconductors, BT152600R Datasheet

BT152600R

Manufacturer Part Number

BT152600R

Description

TO-220

Manufacturer

Philips Semiconductors

Datasheet

1.BT152600R.pdf (6 pages)

Specifications of BT152600R

Date_code

11+

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Philips Semiconductors

GENERAL DESCRIPTION

Glass passivated thyristors in a plastic

envelope,

applications

bidirectional

capability and high thermal cycling

performance. Typical applications

include motor control, industrial and

domestic lighting, heating and static

switching.

PINNING - TO220AB

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/ s.

March 1997

Thyristors

SYMBOL PARAMETER

T(AV)

T(RMS)

TSM

stg

DRM

RGM

G(AV)

tab

/dt

cathode

anode

gate

anode

intended

Repetitive peak off-state

voltages

Average on-state current

RMS on-state current

Non-repetitive peak

on-state current

Repetitive rate of rise of

on-state current after

triggering

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

t for fusing

DESCRIPTION

blocking

requiring

for

use

voltage

high

QUICK REFERENCE DATA

PIN CONFIGURATION

CONDITIONS

half sine wave; T

all conduction angles

half sine wave; T

surge

t = 10 ms

t = 8.3 ms

t = 10 ms

over any 20 ms period

SYMBOL

RRM

T(AV)

T(RMS)

TSM

DRM

/dt = 0.2 A/ s

= 50 A; I

PARAMETER

Repetitive peak off-state

voltages

Average on-state current

RMS on-state current

Non-repetitive peak on-state

current

tab

= 0.2 A;

1 2 3

= 25 ˚C prior to

103 ˚C

BT152-

MIN.

-40

SYMBOL

-400R -600R -800R

450

MAX. MAX. MAX. UNIT

400R

450

200

MAX.

Product specification

650

200

220

200

150

125

0.5

600R

650

200

BT152 series

800

800R

800

200

Rev 1.200

UNIT

A/ s

˚C

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