IRF9530NLPBF International Rectifier Corp., IRF9530NLPBF Datasheet

IRF9530NLPBF

Manufacturer Part Number

IRF9530NLPBF

Description

TO-262

Manufacturer

International Rectifier Corp.

Datasheets

1.IRF9530NLPBF.pdf (11 pages)

2.IRF9530NLPBF.pdf (10 pages)

3.IRF9530NLPBF.pdf (10 pages)

Specifications of IRF9530NLPBF

Date_code

09+

Current page: 1 of 11
Download datasheet (179Kb)

Description

Absolute Maximum Ratings

Thermal Resistance

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate

up to 2.0W in a typical surface mount application.

The through-hole version (IRF9530NL) is available for low-

profile applications.

dv/dt

STG

Pak is suitable for high current applications because of

@ T

Advanced Process Technology

Surface Mount (IRF9530NS)

Low-profile through-hole (IRF9530NL)

175°C Operating Temperature

Fast Switching

P-Channel

Fully Avalanche Rated

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

on-resistance per silicon area.

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Parameter

@ -10V

This

300 (1.6mm from case )

Typ.

–––

D P ak

IRF9530NS/L

HEXFET

-55 to + 175

Max.

0.53

-8.4

-5.0

± 20

250

-14

-10

-56

3.8

7.9

T O -26 2

Power MOSFET

DS(on)

Max.

1.9

DSS

= -14A

PD - 91523A

= -100V

= 0.20

Units

W/°C

°C/W

V/ns

°C

5/13/98

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