K9F2808U0CPCB0 Samsung, K9F2808U0CPCB0 Datasheet

K9F2808U0CPCB0

Manufacturer Part Number

K9F2808U0CPCB0

Description

TSOP48

Manufacturer

Samsung

Datasheet

1.K9F2808U0CPCB0.pdf (31 pages)

Specifications of K9F2808U0CPCB0

Date_code

07+

Current page: 1 of 31
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K9F2808U0C

Document Title

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

Revision History

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

Revision No.

16M x 8 Bit NAND Flash Memory

http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm

2.6

2.1

2.2

2.3

2.4

2.5

0.0

1.0

2.0

History

Initial issue.

TBGA PKG Dimension Change

48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm

1.A3 Pin assignment of TBGA Package is changed.(Page 4)

2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32)

3. Add the data protection Vcc guidence for 1.8V device - below about

The min. Vcc value 1.8V devices is changed.

K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V

Pb-free Package is added.

K9F2808U0C-FCB0,FIB0

K9F2808Q0C-HCB0,HIB0

K9F2816U0C-HCB0,HIB0

K9F2816U0C-PCB0,PIB0

K9F2816Q0C-HCB0,HIB0

K9F2808U0C-HCB0,HIB0

K9F2808U0C-PCB0,PIB0

Some AC parameters are changed(K9F28XXQ0C).

Before

After

1. New definition of the number of invalid blocks is added.

(Minimum 502 valid blocks are guaranteed for each contiguous 64Mb

(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

durations of 20 ns or less.)

1. K9F2808U(Q)0C-DC(I)B0,K9F2816U(Q)0C-DC(I)B0 is deleted.

2. tWC is changed.

45ns(Before) ---> 50ns(After)

3. Minimum valid block number is changed.

1004(Before) --> 1009(After)

1. Minimum valid block number is changed.

1009(Before) --> 1004(After)

(before) NC --> (after) Vss

memory space)

Note is added.

1.1V. (Page 33)

tWC tWH tWP tRC tREH tRP tREA tCEA

Draft Date

Apr. 15th 2002

Sep. 5th 2002

Dec.10th 2002

Mar. 6th 2003

Mar. 13rd 2003

Mar. 26th 2003

May. 24th 2003

Oct. 10th 2003

FLASH MEMORY

Remark

Advance

Preliminary

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