K9K2G08U0MPCB0 Samsung, K9K2G08U0MPCB0 Datasheet
K9K2G08U0MPCB0
Manufacturer Part Number
K9K2G08U0MPCB0
Description
TSOP48
Manufacturer
Samsung
Datasheet
1.K9K2G08U0MFCB0.pdf
(38 pages)
Specifications of K9K2G08U0MPCB0
Date_code
09+
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0
K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
Document Title
Revision History
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you
have any questions, please contact the SAMSUNG branch office near your office.
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
256M x 8 Bit / 128M x 16 Bit
Revision No
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
History
1. Initial issue
1.
-min. Value: 7mA -->3mA
-typ. Value: 8mA -->4mA
1. 5th cycle of ID is changed
: 40h --> 44h
1. Add WSOP Package Dimensions.
1. Max Icc value of 1.8V/3.3V device is changed.
- Max. value Icc1,Icc2,Icc3: 20mA --> 30mA (3.3V device)
- Max. value Icc1,Icc2,Icc3: 15mA --> 20mA (1.8V device)
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)
2. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 36)
The min. Vcc value 1.8V devices is changed.
K9K2GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V
Pb-free Package is added.
K9K2G08U0M-FCB0,FIB0
K9K2G08Q0M-PCB0,PIB0
K9K2G08U0M-PCB0,PIB0
K9K2G16U0M-PCB0,PIB0
K9K2G16Q0M-PCB0,PIB0
Errata is added.(Front Page)-K9K2GXXQ0M
Specification
Relaxed value
1. The 3rd Byte ID after 90h ID read command is don’ t cared.
1. Added Addressing method for program operation
IO
The 5th Byte ID after 90h ID read command is deleted.
L(R/B) of 1.8V device is changed.
tWC tWP tWH tRC tREH tRP tREA tCEA
45
80
25
60
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0
K9K2G16U0M-YCB0,YIB0,PCB0,PIB0
15
20
50
60
NAND Flash Memory
15
80
1
25
60
30
60
45
75
FLASH MEMORY
Draft Date
Sep. 19.2001
Nov. 5. 2001
Jan. 23.2002
May. 29.2002
Sep. 12.2002
Nov. 22.2002
Mar. 6.2003
Mar. 13.2003
Mar. 17.2003
Apr. 9. 2003
Jan. 27. 2004
Remark
Advance
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