MC10EP105MNG ON Semiconductor, MC10EP105MNG Datasheet - Page 7

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MC10EP105MNG

Manufacturer Part Number
MC10EP105MNG
Description
IC GATE AND/NAND QUAD 2INP 32QFN
Manufacturer
ON Semiconductor
Series
10EPr
Datasheet

Specifications of MC10EP105MNG

Logic Type
AND/NAND Gate
Number Of Circuits
4
Number Of Inputs
8 Input (2, 2, 2, 2)
Schmitt Trigger Input
No
Output Type
Differential
Voltage - Supply
3 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
32-TFQFN Exposed Pad
Product
MUX Gates
Logic Family
ECL
High Level Output Current
- 50 mA
Low Level Output Current
50 mA
Propagation Delay Time
0.35 ns
Supply Voltage (max)
+/- 5.5 V
Supply Voltage (min)
+/- 3 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output High, Low
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MC10EP105MNG
Manufacturer:
ON Semiconductor
Quantity:
76
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
17. Input and output parameters vary 1:1 with V
18. All loading with 50 W to V
19. V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
20. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to V
21. Skew is measured between outputs under identical transitions.
Table 10. 100EP DC CHARACTERISTICS, NECL
Symbol
Table 11. AC CHARACTERISTICS
Symbol
I
V
V
V
V
V
I
I
f
t
t
t
t
V
t
t
EE
IH
IL
max
PLH
PHL
SKEW
JITTER
r
f
OH
OL
IH
IL
IHCMR
PP
input signal.
IHCMR
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
min varies 1:1 with V
Power Supply Current
Output HIGH Voltage (Note 18)
Output LOW Voltage (Note 18)
Input HIGH Voltage (Single−Ended)
Input LOW Voltage (Single−Ended)
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 19)
Input HIGH Current
Input LOW Current
Maximum Frequency
(See Figure 4 F
Propagation Delay to
Output Differential
Within Device Skew
Device to Device Skew (Note 21)
Cycle−to−Cycle Jitter
(See Figure 4 F
Input Voltage Swing
(Differential Configuration)
Output Rise/Fall Times
(20% − 80%)
Characteristic
Characteristic
max
max
CC
/JITTER)
/JITTER)
EE
− 2.0 V.
, V
IHCMR
V
V
CC
CC
V
= −3.3 V
= −5.0 V
max varies 1:1 with V
CC
= 0 V; V
CC
.
Q
−1145
−1945
−1225
−1945
Min
0.5
EE
45
45
V
Min
175
150
100
= −3.0 V to −5.5 V or V
EE
http://onsemi.com
V
CC
+2.0
−40°C
−1020
−1820
Typ
= 0 V, V
CC
59
63
−40°C
Typ
250
800
150
> 3
0.2
10
. The V
7
−1695
−1625
EE
−895
−880
Max
150
0.0
80
80
IHCMR
1200
Max
325
200
< 1
= −5.5 V to −3.0 V (Note 17)
50
−1945
−1225
−1945
−1145
range is referenced to the most positive side of the differential
Min
CC
0.5
45
45
Min
200
150
120
V
= 3.0 V to 5.5 V; V
EE
+2.0
−1020
−1820
25°C
Typ
62
66
25°C
Typ
275
800
170
> 3
0.2
10
CC
−1695
−1625
− 2.0 V.
−895
−880
Max
150
0.0
1200
85
85
Max
350
220
< 1
50
EE
= 0 V (Note 20)
−1145
−1945
−1225
−1945
Min
0.5
45
45
Min
225
150
150
V
EE
+2.0
−1020
−1820
85°C
Typ
85°C
65
69
Typ
300
800
200
> 3
0.2
15
−1695
−1625
−895
−880
Max
150
1200
Max
0.0
375
250
85
85
< 1
50
Unit
Unit
GHz
mA
mV
mV
mV
mV
mV
mA
mA
ps
ps
ps
ps
V

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