MB85RC16PNF-G-JNERE1 Fujitsu, MB85RC16PNF-G-JNERE1 Datasheet
MB85RC16PNF-G-JNERE1
Manufacturer Part Number
MB85RC16PNF-G-JNERE1
Description
Manufacturer
Fujitsu
Datasheet
1.MB85RC16PNF-G-JNERE1.pdf
(20 pages)
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MB85RC16PNF-G-JNERE1
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FUJITSU SEMICONDUCTOR
Copyright©2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2011.6
Memory FRAM
16 K (2 K × 8) Bit I
MB85RC16
■ DESCRIPTION
■ FEATURES
The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words ×
8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
memory cells.
Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery.
The memory cells used in the MB85RC16 have at least 10
is a significant improvement over the number of read and write operations supported by other nonvolatile
memory products.
The MB85RC16 can provide writing in one byte units because the long writing time is not required unlike
Flash memory and E
not required.
• Bit configuration
• Operating power supply voltage : 2.7 V to 3.6 V
• Operating frequency
• Two-wire serial interface
• Operating temperature range
• Data retention
• Read/Write endurance
• Package
• Low power consumption
DATA SHEET
2
PROM. Therefore, the writing completion waiting sequence like a write busy state is
: 2,048 words × 8 bits
: 1 MHz (Max)
: Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
: − 40 °C to + 85 °C
: 10 years ( + 75 °C)
: 10
: Plastic / SOP, 8-pin (FPT-8P-M02)
: Operating current 0.1mA (Max: @1 MHz), Standby current 0.1 μA (Typ)
10
times
2
C
10
Read/Write operation endurance per bit, which
DS501-00001-2v0-E
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