GAL16V8D-10LJN Lattice Semiconductor Corp., GAL16V8D-10LJN Datasheet
GAL16V8D-10LJN
Manufacturer Part Number
GAL16V8D-10LJN
Description
Manufacturer
Lattice Semiconductor Corp.
Datasheet
1.GAL16V8D15LP.pdf
(24 pages)
Specifications of GAL16V8D-10LJN
Case
PLCC
Notes
NEW
Date_code
11+
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• HIGH PERFORMANCE E
• 50% to 75% REDUCTION IN POWER FROM BIPOLAR
• ACTIVE PULL-UPS ON ALL PINS
• E
• EIGHT OUTPUT LOGIC MACROCELLS
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS
• APPLICATIONS INCLUDE:
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
• LEAD-FREE PACKAGE OPTIONS
The GAL16V8, at 3.5 ns maximum propagation delay time, com-
bines a high performance CMOS process with Electrically Eras-
able (E
performance available in the PLD market. High speed erase times
(<100ms) allow the devices to be reprogrammed quickly and ef-
ficiently.
The generic architecture provides maximum design flexibility by
allowing the Output Logic Macrocell (OLMC) to be configured by
the user. An important subset of the many architecture configura-
tions possible with the GAL16V8 are the PAL architectures listed
in the table of the macrocell description section. GAL16V8 devices
are capable of emulating any of these PAL architectures with full
function/fuse map/parametric compatibility.
Unique test circuitry and reprogrammable cells allow complete AC,
DC, and functional testing during manufacture. As a result, Lattice
Semiconductor delivers 100% field programmability and function-
ality of all GAL products. In addition, 100 erase/write cycles and
data retention in excess of 20 years are specified.
Copyright © 2006 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject
to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com
16v8_11
Features
Description
— 3.5 ns Maximum Propagation Delay
— Fmax = 250 MHz
— 3.0 ns Maximum from Clock Input to Data Output
— UltraMOS
— 75mA Typ Icc on Low Power Device
— 45mA Typ Icc on Quarter Power Device
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
— Maximum Flexibility for Complex Logic Designs
— Programmable Output Polarity
— Also Emulates 20-pin PAL
— 100% Functional Testability
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
2
CELL TECHNOLOGY
Function/Fuse Map/Parametric Compatibility
2
) floating gate technology to provide the highest speed
®
Advanced CMOS Technology
2
CMOS
®
Devices with Full
®
TECHNOLOGY
1
I/CLK
Functional Block Diagram
Pin Configuration
I
I
I
I/CLK
I
I
GND
I
I
I
I
I
I
I
I
4
6
8
I
I
I
I
I
I
I
I
I
9
I
GAL16V8
1
GND
5
10
Top View
2
I
PLCC
SOIC
16V8
GAL
View
Top
I/CLK
I/OE
11
High Performance E
I/O/Q
Vcc
20
20
11
15
I/O/Q
I/O/Q
13
Vcc
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/OE
18
16
14
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
Generic Array Logic™
GAL16V8
8
8
8
8
8
8
8
8
I/CLK
GND
CLK
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
I
I
I
I
I
I
I
I
1
5
10
2
OE
16V8
CMOS PLD
GAL
August 2006
DIP
20
11
15
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/OE
Vcc
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/OE
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