IRF7101TR International Rectifier Corp., IRF7101TR Datasheet
IRF7101TR
Manufacturer Part Number
IRF7101TR
Description
Manufacturer
International Rectifier Corp.
Datasheet
1.IRF7101TR.pdf
(9 pages)
Specifications of IRF7101TR
Case
SSOP
Date_code
2001
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7101TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7101TRPBF
Manufacturer:
IR
Quantity:
20 000
Thermal Resistance Ratings
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications.
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Description
Absolute Maximum Ratings
I
I
I
P
V
dv/dt
T
D
D
DM
R
D
GS
J,
@ T
@ T
@T
T
Adavanced Process Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
JA
STG
A
A
C
= 25°C
= 100°C
= 25°C
With these improvements, multiple
Maximum Junction-to-Ambient
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Sodering Temperature, for 10 seconds
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G 2
G 1
S 2
S 1
1
2
3
4
Top View
Min.
–––
300(1.6mm from case)
HEXFET
8
6
5
7
-55 to + 150
Max.
0.016
D1
D 1
D 2
D2
± 12
3.5
2.3
2.0
3.0
14
Typ.
S O -8
–––
®
IRF7101
R
Power MOSFET
DS(on)
V
I
DSS
D
PD - 9.871B
= 3.5A
Max
62.5
= 20V
= 0.10
°C/W
Units
Units
W/°C
V/nS
W
°C
A
V
8/25/97