1N5419US Microsemi Corporation, 1N5419US Datasheet

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1N5419US

Manufacturer Part Number
1N5419US
Description
E/VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS
Manufacturer
Microsemi Corporation
Datasheets

Specifications of 1N5419US

Pack_quantity
1
Comm_code
85411000
Lead_time
168
Copyright © 2007
4-27-2007 REV B
IMPORTANT: For the most current data, consult MICROSEMI’s website:
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411
and is ideal for high-reliability applications where a failure cannot be tolerated. These
industry-recognized 3.0 Amp rated rectifiers for working peak reverse voltages from
50 to 600 volts are hermetically sealed with voidless-glass construction using an
internal “Category I” metallurgical bond. These devices are also available in axial-
leaded packages for thru-hole mounting (see separate data sheet for 1N5415 thru
1N5420). Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speeds.
ELECTRICAL CHARACTERISTICS
1N5415US
1N5416US
1N5417US
1N5418US
1N5419US
1N5420US
NOTE 1: From 3.0 Amps at T
linearly to zero at T
ambient is sufficiently controlled where T
NOTE 2: I
TYPE
Surface mount package series equivalent to the
Voidless hermetically sealed glass package
Triple-Layer Passivation
Internal “Category I” Metallurgical bonds
Working Peak Reverse Voltage 50 to 600 Volts.
JAN, JANTX, JANTXV, and JANS available per MIL-
Axial-leaded equivalents also available (see separate
Solder temperatures: 260
JEDEC registered 1N5415 to 1N5420 series
PRF-19500/411
data sheet for 1N5415 thru 1N5420)
Junction Temperature: -65
Storage Temperature: -65
Thermal Resistance: 10
Thermal Impedance: 1.5
Average Rectified Forward Current (I
T
Forward Surge Current (8.3 ms half sine): 80 Amps
A
= 55ºC and 2 Amps @ T
F
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
= 0.5A, I
MAXIMUM RATINGS
V
100V
200V
400V
500V
600V
50V
RWM
S C O T T S D A L E D I V I S I O N
A
FEATURES
= 175
RM
= 1A, I
BREAKDOWN
o
V
C. These ambient ratings are for PC boards where thermal resistance from mounting point to
o
VOLTAGE
o
C/W junction to endcap
MINIMUM
BR
o
o
C/W @ 10 ms heating time
C for 10 s (maximum)
VOLTS
A
C to +175
o
110V
220V
440V
550V
660V
R(REC)
DESCRIPTION
A
55V
C to +175
@ 50μA
= 55
= 100ºC (see Note 1)
o
= 0.250A
C, derate linearly at 22 mA/
o
O
J(max)
C
o
): 3 Amps @
C
does not exceed 175
VOLTS
MIN.
Scottsdale Division
0.6
0.6
0.6
0.6
0.6
0.6
Microsemi
FORWARD
VOLTAGE
V
F
@ 9 A
VOLTS
MAX.
1.5
1.5
1.5
1.5
1.5
1.5
SURFACE MOUNT FAST RECOVERY
http://www.microsemi.com
VOIDLESS-HERMETICALLY SEALED
o
C to 2.0 Amps at T
o
C.
CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver with Tin/Lead (Sn/Pb) finish.
TAPE & REEL option: Standard per EIA-481-B
Tin/Lead (Sn/Pb) finish
Inherently radiation hard as described in Microsemi
1N5415US thru 1N5420US
MARKING: Cathode band only
POLARITY: Cathode indicated by band
WEIGHT:
Fast recovery 3 Amp rectifiers 50 to 600 V
Military and other high-reliability applications
General rectifier applications including bridges, half-
bridges, catch diodes, etc.
High forward surge current capability
Extremely robust construction
Low thermal resistance
Controlled avalanche with peak reverse power
capability
MicroNote 050
See package dimensions and recommended pad
layout on last page
25
µA
1.0
1.0
1.0
1.0
1.0
1.0
MECHANICAL AND PACKAGING
o
MAXIMUM
REVERSE
CURRENT
I
GLASS RECTIFIERS
R
C
APPLICATIONS / BENEFITS
@ V
RWM
100
539 mg
µA
20
20
20
20
20
20
o
A
C
= 100
RECOVERY
MAXIMUM
REVERSE
o
(NOTE 2)
TIME t
C. Above T
150
150
150
150
250
400
ns
APPEARANCE
Package “E”
rr
or D-5B
A
AMPS
= 100
55
3.0
3.0
3.0
3.0
3.0
3.0
CURRENT I
RECTIFIED
o
AVERAGE
C
(NOTE 1)
o
C, derate
AMPS
Page 1
100
2.0
2.0
2.0
2.0
2.0
2.0
O
o
C

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