IXFN56N90P_11 IXYS [IXYS Corporation], IXFN56N90P_11 Datasheet

IXFN56N90P_11

Manufacturer Part Number

IXFN56N90P_11

Description

Polar HiPerFET Power MOSFET

Manufacturer

IXYS [IXYS Corporation]

Datasheet

1.IXFN56N90P_11.pdf (4 pages)

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Polar

Power MOSFET

Symbol

dv/dt

Weight

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

D25

GSS

DSS

stg

DSS

DGR

GSS

GSM

ISOL

GS(th)

DS(on)

DSS

= 25°C, Unless Otherwise Specified)

HiPerFET

Test Conditions

Continuous

Transient

1.6mm (0.062 in.) from case for 10s

50/60 Hz, RMS

Mounting Torque

Terminal Connection Torque

Test Conditions

ISOL

= 25°C to 150°C

= 25°C to 150°C, R

= 25°C

= 25°C, Pulse Width Limited by T

= 25°C

≤ I

= 25°C

≤ 1mA

= 0V, I

= V

= ± 30V, V

= V

= 10V, I

, V

DSS

, I

, V

= 8mA

= 3mA

= 0.5 • I

≤ V

= 0V

DSS

= 0V

, T

D25

≤ 150°C

, Note 1

= 1MΩ

= 125°C

t = 1s

t = 1min

IXFN56N90P

900

Characteristic Values

Min.

3.5

-55 ... +150

Maximum Ratings

1.3/11.5

1.5/13

1000

2500

3000

± 30

± 40

900

168

150

300

Typ.

± 200

Max.

145 mΩ

Nm/lb.in.

6.5

5 mA

V/ns

μA

°C

miniBLOC

G = Gate

S = Source

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

Features

Advantages

Applications

D25

Isolation

International Standard Package

miniBLOC, with Aluminium Nitride

Low R

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier

High Power Density

Easy to Mount

Space Savings

Switch-Mode and Resonant-Mode

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

Power Supplies

DS(on)

DSS

E153432

DS(on)

= 900V

= 56A

≤ ≤ ≤ ≤ ≤ 145mΩ Ω Ω Ω Ω

≤ ≤ ≤ ≤ ≤ 300ns

and Q

D = Drain

DS100066A(02/11)

Related parts for IXFN56N90P_11

IXFN56N90P_11 Summary of contents

Page 1

Polar HiPerFET TM TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C, R DGR J V Continuous GSS V Transient GSM ...

Page 2

Symbol Test Conditions (T = 25°C Unless Otherwise Specified 20V 0.5 • Gate Input Resistance Gi C iss 0V 25V 1MHz oss ...

Page 3

Fig. 1. Output Characteristics @ Volts DS Fig. 3. Output Characteristics @ ...

Page 4

Fig. 7. Input Admittance 4.5 5.0 5.5 6.0 6 Volts GS Fig. 9. Forward Voltage Drop of Intrinsic Diode 180 160 140 120 100 ...

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