IRFP254A IRF [International Rectifier], IRFP254A Datasheet

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IRFP254A

Manufacturer Part Number
IRFP254A
Description
$GYDQFHG 3RZHU 026)(7
Manufacturer
IRF [International Rectifier]
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP254A
Manufacturer:
SAMSUNG
Quantity:
194
Part Number:
IRFP254A
Manufacturer:
FSC
Quantity:
20 000
©1999 Fairchild Semiconductor Corporation
Thermal Resistance
FEATURES
Absolute Maximum Ratings
T
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10 A (Max.) @ V
Low R
Symbol
Symbol
J
R
dv/dt
R
R
V
V
E
E
I
I
, T
P
I
T
DM
AR
DSS
D
GS
AR
AS
JC
CS
JA
D
L
STG
DS(ON)
: 0.108
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
(Typ.)
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
Case-to-Sink
C
=25 C)
C
C
DS
=25 C)
=100 C)
= 250V
(1)
(2)
(1)
(1)
(2)
Typ.
0.24
--
--
- 55 to +150
Value
15.9
22.1
1.79
300
250
100
781
221
BV
R
I
4.8
25
25
TO-3P
1
1.Gate 2. Drain 3. Source
D
30
IRFP254A
2
DS(on)
3
DSS
= 25 A
0.56
Max.
40
--
= 0.14
= 250 V
Units
Units
W/ C
V/ns
C/W
mJ
mJ
W
V
A
A
V
A
C
Rev. B

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IRFP254A Summary of contents

Page 1

... Storage Temperature Range Maximum Lead Temp. for Soldering T L Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic R Junction-to-Case JC R Case-to-Sink CS R Junction-to-Ambient JA ©1999 Fairchild Semiconductor Corporation IRFP254A BV DSS R DS(on TO-3P = 250V 1.Gate 2. Drain 3. Source Value 250 =25 C) ...

Page 2

... IRFP254A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... C iss oss rss Drain-Source Voltage [V] DS IRFP254A Fig 2. Transfer Characteristics ...

Page 4

... IRFP254A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ C] J Fig 9. Max. Safe Operating Area ...

Page 5

... DUT 10V 10V Resistor L V out 90 0.5 rated 10 d(on ---- DSS IRFP254A Charge t d(off off BV DSS 2 -------------------- DSS (t) DS Time t p ...

Page 6

... IRFP254A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Driver ) I , Body Diode Forward Current DUT ) DUT ) + Same Type as DUT dv/dt controlled controlled by Duty Factor D S Gate Pulse Width -------------------------- Gate Pulse Period ...

Page 7

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ...

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