BRF61002 ETC1 [List of Unclassifed Manufacturers], BRF61002 Datasheet
BRF61002
Manufacturer Part Number
BRF61002
Description
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet
1.BRF61002.pdf
(4 pages)
BIPOLARICS, INC.
SYMBOL
FEATURES:
•
•
•
•
PERFORMANCE DATA:
•
I
P
|S
G
CBO
I
h
EBO
High Gain
NF
1d B
C
High Gain Bandwidth Product
Dice, Plastic, Hermetic and Surface
Electrical Characteristics (T
1d B
Low Noise Figure
Mount packages available
21
FE
CB
f
|S
t
|
2
f
1.6 dB typ at 1 GHz
2.0 dB typ at 2 GHz
21
t
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
= 12 GHz typ @ I
|
2
= 18.1 dB @ 1 GHz
Collector Base Capacitance: V
Gain Bandwidth Product
Insertion Power Gain:
Power output at 1dB compression:
Gain at 1dB compression:
Forward Current Transfer Ratio:
Emitter Cutoff Current : V
Noise Figure: V
0.2
V
12.8 dB @ 2 GHz
CE
= 8V, I
Collector Cutoff Current
PARAMETERS & CONDITIONS
V
CE
C
= 10 mA
=8V, I
CE
=8V, I
C
C
A
= 10 mA
= 10 mA unless stated
= 25
C
EB
= 2mA
PRODUCT DATA SHEET
=1V
o
C)
CB
f = 2.0 GHz
f = 1.0 GHz
: V
= 8V
CB
=8V
Z
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1MHz
f = 1MHz
S
= 50
DESCRIPTION AND APPLICATIONS:
Bipolarics' BRF610is a high performance silicon bipolar
transistor intended for use in low noise application at VHF,
UHF and microwave frequencies. High performance low
noise performance can be realized at 2 mA or less making the
BRF610an excellent choice for battery applications. From 10
mA to greater than 20mA, f
recommended continuous current is 20 mA. A broad range of
packages are offered including SOT-23, SOT-143, plastic and
ceramic 0.085" Micro-X, 0.070" Stripline and unencapsulated
dice.
Absolute Maximum Ratings:
V
V
T
T
SYMBOL
V
I
C CONT
J
STG
CEO
EBO
CBO
Part Number BRF610
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
GHz
UNIT
dBm
dBm
PARAMETERS
A
dB
pF
A
t
is nominally 10 GHz. Maximum
MIN.
50
-65 to 150
12.8
TYP.
18.1
RATING
0.11
100
12
12
15
1.6
200
1.5
9
20
7
MAX.
UNITS
mA
o
250
1.0
o
V
V
V
C
C
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BRF61002 Summary of contents
Page 1
BIPOLARICS, INC. NPN LOW NOISE SILICON MICROWAVE TRANSISTOR FEATURES: • High Gain Bandwidth Product GHz typ @ I t • Low Noise Figure 1.6 dB typ at 1 GHz 2.0 dB typ at 2 GHz • High ...
Page 2
BIPOLARICS, INC. NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF61004 Package Style 04: 0.145" Plastic Macro-X BRF61085 PackageStyle 85: 0.085" Plastic Micro-X Part Number BRF610 BRF61086 Package Style 86: 0.085" Plastic Micro-X, Surface Mount 0. 0.032+0.015 2.34+0.38 ...
Page 3
... BIPOLARICS, INC. NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF61002J PackageStyle 02J: SOT-23J 0.30 0.51 0.45 0.60 1.90 2.65 3.04 0.00 0.10 0.45 0.60 BRF61014 Package Style 14: SOT-143 1.39 2.25 1.57 2.75 0.95 0.79 1.1 0.10 BRF61092 Package Style 92: TO-92 Part Number BRF610 BRF61002 PackageStyle 02: SOT-23 3 PAGE ...
Page 4
BIPOLARICS, INC. NPN LOW NOISE SILICON MICROWAVE TRANSISTOR BRF61035 Package Style 35: Micro-X 0.085" Ceramic LEAD 1 2 Package Style Base Emitter 14, 85, 35 & 10 BIPOLARICS, INC. 46766 Lakeview Blvd. Fremont, CA 94538 Phone: (510)226-6565 FAX: (510) 226-6765 ...