STP3481S6RG STANSON [Stanson Technology], STP3481S6RG Datasheet
STP3481S6RG
Related parts for STP3481S6RG
STP3481S6RG Summary of contents
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... TSOP-6P 1.2.5.6.Drain 3.Gate PART MARKING TSOP-6P Y: Year Code A: Process Code ORDERING INFORMATION Part Number STP3481S6RG ※ Process Code : 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com P Channel Enhancement Mode MOSFET FEATURE -30V/-5.2A, R -30V/-4.2A, R Super high density cell design for ...
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... STP3481S6RG S6 : TSOP- Tape Reel ; – Free ABSOULTE MAXIMUM RATINGS ( ℃ Unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain CurrentTJ=150 ℃ ) Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation Operation Junction Temperature Storgae Temperature Range ...
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ELECTRICAL CHARACTERISTICS ( ℃ Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate ...
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TYPICAL CHARACTERICTICS (25 ℃ Unless noted) 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 P Channel Enhancement Mode MOSFET 4 STP3481 2006. V1 -5.2A ...
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TYPICAL CHARACTERICTICS (25 ℃ Unless noted) 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 P Channel Enhancement Mode MOSFET 5 STP3481 2006. V1 -5.2A ...
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TSOP-6P PACKAGE OUTLINE C 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STP3481 P Channel Enhancement Mode MOSFET 6 STP3481 2006. V1 -5.2A ...