BSS138BKW,115

Manufacturer Part NumberBSS138BKW,115
DescriptionSC70-3/60 V, 320 mA N-channel Trench MOSFET
ManufacturerPhilips Semiconductors
BSS138BKW,115 datasheet
 


Specifications of BSS138BKW,115

Lead_time28Pack_quantity3000
Comm_code85412100EccnEAR99
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BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
Rev. 1 — 12 August 2011
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
Static characteristics
R
DSon
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
Quick reference data
Parameter
Conditions
drain-source voltage
T
= 25 °C
j
gate-source voltage
drain current
V
= 10 V; T
GS
drain-source on-state
V
= 10 V; I
GS
resistance
T
= 25 °C
j
Product data sheet
ESD protection up to 1.5 kV
AEC-Q101 qualified
Low-side loadswitch
Switching circuits
Min
Typ
-
-
-20
-
[1]
= 25 °C
-
-
amb
= 320 mA;
-
1
D
Max
Unit
60
V
20
V
320
mA
1.6
2
.