MX29F400CTTI-70G Macronix International Co., MX29F400CTTI-70G Datasheet

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MX29F400CTTI-70G

Manufacturer Part Number
MX29F400CTTI-70G
Description
Manufacturer
Macronix International Co.

Specifications of MX29F400CTTI-70G

Case
TSOP48
Date_code
09+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MX29F400CTTI-70G
Manufacturer:
MXIC
Quantity:
20 000
FEATURES
• 524,288 x 8/262,144 x 16 switchable
• Single power supply operation
• Fast access time: 55/70/90ns
• Compatible with MX29F400T/B device
• Low power consumption
• Command register architecture
• Auto Erase (chip & sector) and Auto Program
• Erase suspend/Erase Resume
• Status Reply
GENERAL DESCRIPTION
The MX29F400C T/B is a 4-mega bit Flash memory or-
ganized as 512K bytes of 8 bits or 256K words of 16 bits.
MXIC's Flash memories offer the most cost-effective and
reliable read/write non-volatile random access memory.
The MX29F400C T/B is packaged in 44-pin SOP, 48-pin
TSOP. It is designed to be reprogrammed and erased in
system or in standard EPROM programmers.
The standard MX29F400C T/B offers access time as
fast as 55ns, allowing operation of high-speed micropro-
cessors without wait states. To eliminate bus conten-
tion, the MX29F400C T/B has separate chip enable (CE#)
and output enable (OE#) controls.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29F400C T/B uses a command register to manage
this functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
P/N:PM1200
- 5.0V only operation for read, erase and program
operation
- 40mA maximum active current(5MHz)
- 1uA typical standby current
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1, 8K-
Bytex2, 32K-Bytex1, and 64K-Byte x7)
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
- Suspends an erase operation to read data from, or
program data to, another sector that is not being
erased, then resumes the erase
- Data# Polling & Toggle bit for detection of program
and erase cycle completion
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE
5V ONLY BOOT SECTOR FLASH MEMORY
1
• Ready/Busy pin (RY/BY#)
• Sector protect/chip unprotect for 5V only system
• Sector protection
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Code Sector Architecture
• Low VCC write inhibit is equal to or less than 3.2V
• Package type:
• Compatibility with JEDEC standard
• 20 years data retention
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29F400C T/B uses a 5.0V 10% VCC sup-
ply to perform the High Reliability Erase and auto Pro-
gram/Erase algorithms.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
- Provides a hardware method of detecting program or
erase cycle completion
- Hardware method to disable any combination of
sectors from program or erase operations
- Temporary sector unprotect allows code changes in
previously locked sectors
- T = Top Boot Sector
- B = Bottom Boot Sector
- 44-pin SOP
- 48-pin TSOP
- All Pb-free devices are RoHS Compliant
- Pinout and software compatible with single-power
supply Flash
MX29F400C T/B
REV. 1.0, DEC. 20, 2005

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