MX29F040QC70 Macronix International Co., MX29F040QC70 Datasheet

MX29F040QC70

Manufacturer Part Number

MX29F040QC70

Description

PLCC32

Manufacturer

Macronix International Co.

Datasheet

1.MX29F040QC-70.pdf (39 pages)

Specifications of MX29F040QC70

Date_code

04+

Current page: 1 of 39
Download datasheet (870Kb)

FEATURES

• 524,288 x 8 only

• Single power supply operation

• Fast access time: 55/70/90/120ns

• Low power consumption

• Command register architecture

• Auto Erase (chip & sector) and Auto Program

• Erase suspend/Erase Resume

GENERAL DESCRIPTION

The MX29F040 is a 4-mega bit Flash memory organized

as 512K bytes of 8 bits. MXIC's Flash memories offer the

most cost-effective and reliable read/write non-volatile

random access memory. The MX29F040 is packaged

in 32-pin PLCC, TSOP, PDIP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

The standard MX29F040 offers access time as fast as

55ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention, the

MX29F040 has separate chip enable (CE) and output

enable (OE ) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F040 uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

P/N:PM0538

- 5.0V only operation for read, erase and program

operation

- 30mA maximum active current(5MHz)

- 1uA typical standby current

- Byte Programming (7us typical)

- Sector Erase

8 equal sectors of 64K-Byte each

- Automatically erase any combination of sectors

with Erase Suspend capability.

- Automatically program and verify data at specified

address

- Suspends an erase operation to read data from,

4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY

• Status Reply

• Sector protect/unprotect for 5V only system or 5V/

• Sector protection

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

• Compatibility with JEDEC standard

• 20 years data retention

during erase and programming, while maintaining

maximum EPROM compatibility.

MXIC Flash technology reliably stores memory

contents even after 100,000 erase and program

cycles. The MXIC cell is designed to optimize the

erase and program mechanisms. In addition, the

combination of advanced tunnel oxide processing

and low internal electric fields for erase and

programming operations produces reliable cycling.

The MX29F040 uses a 5.0V±10% VCC supply to

perform the High Reliability Erase and auto

Program/Erase algorithms.

The highest degree of latch-up protection is

achieved with MXIC's proprietary non-epi process.

Latch-up protection is proved for stresses up to

100 milliamps on address and data pin from -1V to

VCC + 1V.

or program data to, another sector that is not being

erased, then resumes the erase.

- Data polling & Toggle bit for detection of program

and erase cycle completion.

12V system.

- Hardware method to disable any combination of

sectors from program or erase operations

- 32-pin PLCC, TSOP or PDIP

- Pinout and software compatible with single-power

supply Flash

MX29F040

REV. 1.6, AUG. 08, 2001

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