MX29LV320CTTC-70G Macronix International Co., MX29LV320CTTC-70G Datasheet

MX29LV320CTTC-70G

Manufacturer Part Number

MX29LV320CTTC-70G

Description

Manufacturer

Macronix International Co.

Datasheets

1.MX29LV320CTTC-70G.pdf (62 pages)

2.MX29LV320CTTC-70G.pdf (62 pages)

Specifications of MX29LV320CTTC-70G

Case

TSOP48

Date_code

06+

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FEATURES

GENERAL FEATURES

• 4,194,304 x 8 / 2,097,152 x 16 switchable

• Sector Structure

• Extra 64K-Byte sector for security

• Twenty-Four Sector Groups

• Single Power Supply Operation

• Latch-up protected to 250mA from -1V to Vcc + 1V

• Low Vcc write inhibit is equal to or less than 1.4V

• Compatible with JEDEC standard

• Fully compatible with MX29LV320A T/B device

PERFORMANCE

• High Performance

GENERAL DESCRIPTION

The MX29LV320C T/B is a 32-mega bit Flash memory

organized as 4M bytes of 8 bits and 2M words of 16 bits.

MXIC's Flash memories offer the most cost-effective and

reliable read/write non-volatile random access memory.

The MX29LV320C T/B is packaged in 48-pin TSOP and

48-ball CSP. It is designed to be reprogrammed and

erased in system or in standard EPROM programmers.

The standard MX29LV320C T/B offers access time as

fast as 70ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus conten-

tion, the MX29LV320C T/B has separate chip enable

(CE#) and output enable (OE#) controls.

P/N:PM1188

- 8K-Byte x 8 and 64K-Byte x 63

- Features factory locked and identifiable, and cus-

tomer lockable

- Provides sector group protect function to prevent pro-

gram or erase operation in the protected sector group

- Provides chip unprotect function to allow code chang-

ing

- Provides temporary sector group unprotect function

for code changing in previously protected sector groups

- 2.7 to 3.6 volt for read, erase, and program opera-

tions

- Pinout and software compatible to single power sup-

ply Flash

- Fast access time: 70/90ns

- Fast program time: 7us/word typical utilizing acceler-

ate function

- Fast erase time: 0.9s/sector, 35s/chip (typical)

MX29LV320C T/B

32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV320C T/B uses a command register to manage

this functionality.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and program

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and programming operations produces reliable

• Low Power Consumption

• Minimum 100,000 erase/program cycle

• 10 years data retention

SOFTWARE FEATURES

• Erase Suspend/ Erase Resume

• Status Reply

• Support Common Flash Interface (CFI)

HARDWARE FEATURES

• Ready/Busy# (RY/BY#) Output

• Hardware Reset (RESET#) Input

• WP#/ACC input pin

PACKAGE

• 48-Pin TSOP

• 48-Ball CSP

• All Pb-free devices are RoHS Compliant

- Low active read current: 10mA (typical) at 5MHz

- Low standby current: 200nA (typical)

- Suspends sector erase operation to read data from

or program data to another sector which is not being

erased

- Data# Polling & Toggle bits provide detection of pro-

gram and erase operation completion

- Provides a hardware method of detecting program

and erase operation completion

- Provides a hardware method to reset the internal state

machine to read mode

- Provides accelerated program capability

3V ONLY FLASH MEMORY

REV. 1.0, AUG. 02, 2005

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