IRG4PC40S/PBF International Rectifier Corp., IRG4PC40S/PBF Datasheet

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IRG4PC40S/PBF

Manufacturer Part Number
IRG4PC40S/PBF
Description
Manufacturer
International Rectifier Corp.
Datasheets

Specifications of IRG4PC40S/PBF

Case
TO
Date_code
04+
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
Features
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
www.irf.com
• Standard: Optimized for minimum saturation
• Generation 4 IGBT design provides tighter
• Industry standard TO-247AC package
• Lead-Free
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
CM
LM
Generation 3
parameter distribution and higher efficiency than
ARV
J
STG
θJC
θCS
θJA
CES
GE
D
D
industry-standard Generation 3 IR IGBT's
voltage and low operating frequencies ( < 1kHz)
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
IRG4PC40SPbF
300 (0.063 in. (1.6mm from case )
6 (0.21)
Typ.
0.24
–––
–––
E
C
10 lbf•in (1.1N•m)
-55 to + 150
Standard Speed IGBT
TO-247AC
Max.
± 20
600
120
120
160
60
31
15
65
V
@V
CE(on) typ.
Max.
0.77
V
–––
–––
GE
40
CES
= 15V, I
PD -95171
= 600V
= 1.32V
C
= 31A
Units
g (oz)
Units
°C/W
04/23/04
mJ
W
°C
V
V
A
1

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