HX6228ASNT HONEYWELL [Honeywell Solid State Electronics Center], HX6228ASNT Datasheet - Page 7

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HX6228ASNT

Manufacturer Part Number
HX6228ASNT
Description
128K x 8 STATIC RAM-SOI HX6228
Manufacturer
HONEYWELL [Honeywell Solid State Electronics Center]
Datasheet
WRITE CYCLE AC TIMING CHARACTERISTICS (1)
(1) Test conditions: input switching levels VIL/VIH=0.5V/VDD-0.5V (CMOS), VIL/VIH=0V/3V (TTL), input rise and fall times <1 ns/V, input and
(2) Typical operating conditions: VDD=5.0 V, TA=25°C, pre-radiation.
(3) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55 to 125°C, post total dose at 25°C.
(4) TAVAVW = TWLWH + TWHWL.
TAVAVW Write Cycle Time
TWLWH
TSLWH
TDVWH
TAVWH
TWHDX
TAVWL
TWHAX
TWLQZ
TWHQX
TWHWL
TEHWH
Symbol
output timing reference levels shown in the Tester AC Timing Characteristics table, capacitive output loading >50 pF, or equivalent capacitive
load of 5 pF for TWLQZ.
DATA IN
ADDRESS
NWE
DATA OUT
NCS
Write Enable Write Pulse Width
Chip Select to End of Write Time
Data Valid to End of Write Time
Address Valid to End of Write Time
Data Hold Time after End of Write Time
Address Valid Setup to Start of Write Time
Address Valid Hold after End of Write Time
Write Enable to Output Disable Time
Write Disable to Output Enable Time
Write Recovery Time
Chip Enable to End of Write Time
CE
Parameter
T
WHWL
(4)
IMPEDANCE
T
AVWL
HIGH
T
WLQZ
T
EHWH
T
SLWH
7
T
WLWH
T
AVAVW
T
DATA VALID
AVWH
T
DVWH
Typical
13
12
10
12
11
(2)
9
9
0
0
0
5
4
T
T
WHDX
T
Min
25
20
20
15
20
20
WHQX
Worst Case (3)
WHAX
0
0
0
0
5
5
-55 to 125
°
Max
C
9
HX6228
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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