SVD4N60F Hangzhou Silan Microelectronics, SVD4N60F Datasheet

SVD4N60F

Manufacturer Part Number

SVD4N60F

Description

TO-220

Manufacturer

Hangzhou Silan Microelectronics

Datasheet

1.SVD4N60F.pdf (7 pages)

Specifications of SVD4N60F

Date_code

11+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SVD4N60F

Manufacturer:

SILAN/士兰微

Quantity:

20 000

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ORDERING SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

4A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION

SVD4N60T/F is an N-channel enhancement mode power MOS

field effect transistor which is produced using Silan proprietary

S-Rin

cell and the improved guarding ring terminal have been especially

tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC

converters and H-bridge PWM motor drivers.

FEATURES

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation(T

Single Pulsed Avalanche Energy (Note 1)

Repetitive Avalanche Energy (Note 2)

Operation Junction Temperature

Storage Temperature

4A,600V,R

Low gate charge

Low Crss

Fast switching

Improved dv/dt capability

SVD4N60T

SVD4N60F

structure DMOS technology. The improved planar stripe

Part No.

DS(on) typ

Parameter

-Derate above 25 C

=25 C)

=2.0 @V

TO-220F-3L

TO-220-3L

Package

=10V

(Tc=25 C unless otherwise noted)

Symbol

stg

SVD4N60T

SVD4N60F

SVD4N60T

Marking

100

0.8

SVD4N60T/SVD4N60F

-55 +150

600

±30

330

5.0

7.3

REV:1.0

SVD4N60F

0.26

50Unit/Tube

Shipping

Page 1 of 7

2009.07.09

W/ C

Unit

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