AS4C256K16F0-25JC ALSC [Alliance Semiconductor Corporation], AS4C256K16F0-25JC Datasheet
AS4C256K16F0-25JC
Related parts for AS4C256K16F0-25JC
AS4C256K16F0-25JC Summary of contents
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Features • Organization: 262,144 words × 16 bits • High speed - 25/30/35/50 ns RAS access time - 12/16/18/25 ns column address access time - 7/10/10/10 ns CAS access time • Low power consumption - Active: 770 mW max (ASAS4C256K16FO-50) ...
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... Functional description The AS4C256K16FO is a high-performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) device organized as 262,144 words × 16 bits. The AS4C256K16FO is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. ...
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Absolute maximum ratings Parameter Input voltage Output voltage Power supply voltage Operating temperature Storage temperature (plastic) Soldering temperature time Power dissipation Short circuit output current Latch-up current Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent ...
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AC parameters common to all waveforms Standard Symbol Parameter t Random read or write cycle time RC t RAS precharge time RP t RAS pulse width RAS t CAS pulse width CAS t RAS to CAS delay time RCD t ...
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Write cycle Standard Symbol Parameter t Column address setup time ASC t Column address hold time CAH t Column address hold time to RAS AWR t Write command setup time WCS t Write command hold time WCH t Write command ...
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Refresh cycle Standard Symbol Parameter t CAS setup time (CAS-before-RAS) CSR t CAS hold time (CAS-before-RAS) CHR t RAS precharge to CAS hold time RPC CAS precharge time t CPT (CAS-before-RAS counter test) Output enable Standard Symbol Parameter t RAS ...
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Key to switching waveforms Rising input Read cycle waveform RAS t CRP UCAS, LCAS t ASR Address Row Address WE OE I/O 4/11/01; V.0.9.1 ® Falling input RAS t t RCD RSH t CSH t t CAH ...
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Upper byte read waveform RAS t CRP UCAS t CRP LCAS t RAH t RAD t ASR Row Address WE OE Upper I/O Lower I/O Lower byte read waveform RAS LCAS UCAS t RAH t RAD t ASR Row Address ...
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Early write waveform RAS t CRP UCAS, LCAS t ASR Row Address Address WE OE I/O 4/11/01; V.0.9.1 ® RAS t CSH t RSH t t RCD CAS t AWR t t RAD RAL t ASC t ...
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Upper byte early write waveform RAS t ASR t RAH Row Address Address t CRP UCAS t CRP LCAS WE OE Upper I/O Lower I/O 4/11/01; V.0.9.1 ® RAS t AWR t RAD t RAL Column Address ...
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Lower byte early write waveform RAS t ASR Address Row Address t CRP UCAS t CRP LCAS WE OE Upper I/O Lower I/O Write waveform RAS t CRP UCAS, LCAS t ASR Row Address Address WE OE I/O 4/11/01; V.0.9.1 ...
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Upper byte write waveform RAS t ASR Row Address Address t CRP UCAS t CRP LCAS WE OE Upper I/O Lower I/O 4/11/01; V.0.9.1 ® RAS t t RAD RAL t AWR t RAH Column Address t ...
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Lower byte write waveform RAS t ASR t RAH Address Row Address t CRP LCAS t CRP UCAS WE OE Upper I/O Lower I/O Read-modify-write waveform RAS t CRP UCAS, LCAS t RAD t ASR Row Address Address WE OE ...
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Upper byte read-modify-write waveform RAS t t CRP UCAS t CRP LCAS t RAD t ASR t RAH Address Row t RCS WE OE Upper Input Upper Output Lower Input Lower Output 4/11/01; V.0.9.1 ® t RWC t RAS t ...
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Lower byte read-modify write waveform RAS t CRP UCAS t t CRP LCAS t RAD t t ASR ACS t RAH Address Row t RCS WE OE Upper Input Upper Output Lower Input Lower Output 4/11/01; V.0.9.1 ® t RWC ...
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Fast page mode read waveform RAS t t CRP RCD UCAS, LCAS t RAD t ASR Row Address RAC I/O Fast page mode byte read waveform RAS RCD CRP UCAS t CRP LCAS t ...
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Fast page mode early write waveform t RAS t t CRP RCD UCAS, LCAS t t ASR RAD Row address Address I/O Fast page mode byte early write waveform RAS t CSH t t CRP RCD ...
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Fast page mode read-modify-write waveform RAS t CSH t RCD UCAS, t LCAS RAD t t ASR RAH Row Ad Col Ad Address t RCS WE t OEA OE t RAC I/O CAS-before-RAS refresh waveform t RP RAS t RPC ...
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Fast page mode byte read-modify-write waveform RAS t CSH t RCD t CRP UCAS LCAS t RAD t RAH t t ASR ASC Address AWD t RCS t RWD OED t DS Upper ...
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Hidden refresh waveform (read) t RAS RAS t CRP t RCD CAS RAD t RAH t ASR Row Address t RCS RAC t AA I/O Hidden refresh waveform (write) RAS t t CRP RCD ...
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CAS before RAS refresh counter test waveform RAS UCAS, LCAS Address I I I/O 4/11/01; V.0.9.1 ® t RAS t t CSR CPT t t CHR CAS t RAL t CAH Col Address t ...
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CAS-before-RAS self refresh cycle t RP RAS t RPC t CP UCAS, LCAS DQ Typical AC and DC characteristics Normalized access time t RAC vs. supply voltage V CC 1.5 1 25°C a 1.3 1.2 1.1 1.0 0.9 ...
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Typical refresh current I CC3 vs. supply voltage 4.0 4.5 5.0 5.5 6.0 Supply voltage (V) Typical TTL stand-by current I CC2 vs. ambient temperature T a 3.5 3.0 2.5 ...
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Package dimensions 4443424140393837363534333231 40/44-pin TSOP 91011121314 40-pin SOJ Pin Capacitance Parameter Input capacitance I/O capacitance 4/11/01; V.0.9.1 ® ...
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... Ordering codes –25 ns AS4C256K16F0-25JC AS4C256K16F0-30JC AS4C256K16F0-25JI AS4C256K16F0-30JI AS4C256K16F0-25TC AS4C256K16F0-30TC AS4C256K16F0-25TI AS4C256K16F0-30TI Part numbering system AS4C 256K16F0 DRAM prefix Device number RAS access time 4/11/01; V.0.9.1 ® –30 ns –35 ns AS4C256K16F0-35JC AS4C256K16F0-35JI AS4C256K16F0-35TC AS4C256K16F0-35TI –XX X Package Plastic SOJ, 400 mil, 40-pin T = TSOP II, 400 mil, 40/44-pin ...