HAT2036R-EL-E RENESAS [Renesas Technology Corp], HAT2036R-EL-E Datasheet
HAT2036R-EL-E
Available stocks
Related parts for HAT2036R-EL-E
HAT2036R-EL-E Summary of contents
Page 1
... HAT2036R Silicon N Channel Power MOS FET Power Switching Features Low on-resistance typ DS (on) Capable of 4.5 V gate drive Low drive current High density mounting High speed switching typ. f Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 <FP-8DAV> ) Rev.6.00 Sep 07, 2005 page ...
Page 2
... HAT2036R Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. When using the glass epoxy board (FR4 40 Electrical Characteristics ...
Page 3
... HAT2036R Main Characteristics Rev.6.00 Sep 07, 2005 page Power vs. Temperature Derating 4.0 Test Condition: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 3.0 2.0 1 100 150 Ambient Temperature Ta (°C) 200 ...
Page 4
... Ordering Information Part Name HAT2036R-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.6.00 Sep 07, 2005 page Package Name MASS[Typ.] FP-8DAV 0.085g ...
Page 5
Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...