DMN2004DMK_0711 DIODES [Diodes Incorporated], DMN2004DMK_0711 Datasheet
DMN2004DMK_0711
Manufacturer Part Number
DMN2004DMK_0711
Description
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Manufacturer
DIODES [Diodes Incorporated]
Datasheet
1.DMN2004DMK_0711.pdf
(4 pages)
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
•
•
•
•
•
•
•
•
•
•
•
Notes:
DMN2004DMK
Document number: DS30937 Rev. 3 - 2
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected up to 2KV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
1.
2.
3.
4.
5.
Device mounted on FR-4 PCB.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
Characteristic
ESD protected up 2kV
@T
A
= 25°C unless otherwise specified
Characteristic
Characteristic
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Steady
State
TOP VIEW
Symbol
R
BV
V
DS (ON)
I
I
C
|Y
V
C
C
GS(th)
DSS
GSS
oss
SD
rss
DSS
iss
fs
|
www.diodes.com
SOT-26
T
T
Min
200
0.5
0.5
A
A
20
⎯
⎯
⎯
⎯
⎯
⎯
1 of 4
= 25°C
= 85°C
Mechanical Data
•
•
•
•
•
•
•
•
Typ
0.4
0.5
0.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Case: SOT-26
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.015 grams (approximate)
Internal Schematic
S
D
2
2
TOP VIEW
Max
0.55
0.70
150
1.0
0.9
1.4
±1
25
20
⎯
⎯
1
G
G
1
2
Symbol
Symbol
T
V
V
j,
R
I
P
GSS
T
DSS
I
DM
θ JA
D
d
STG
D
S
1
1
Unit
ms
μA
μA
pF
pF
pF
V
V
Ω
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
-65 to +150
= 16V, V
= 0V, I
= V
=10V, I
= 16V, V
= ±4.5V, V
= 4.5V, I
= 2.5V, I
= 1.8V, I
= 0V, I
Value
Value
540
390
225
556
1.5
GS
20
±8
, I
Test Condition
D
S
D
D
DMN2004DMK
= 10μA
GS
D
D
D
= 115mA
GS
= 0.2A
= 250μA
= 540mA
= 500mA
= 350mA
DS
= 0V
= 0V
= 0V
© Diodes Incorporated
November 2007
Units
Units
°C/W
mW
mA
°C
V
V
A
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DMN2004DMK_0711 Summary of contents
Page 1
Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD ...
Page 2
V , DRAIN-SOURCE VOLTAGE (V) DS Fig. 1 Typical Output Characteristics T , CHANNEL TEMPERATURE (°C) ch Fig. 3 Gate Threshold Voltage vs. Channel Temperature I , DRAIN CURRENT (A) D Fig. 5 Static Drain-Source On-Resistance ...
Page 3
I , DRAIN CURRENT (A) D Fig. 7 On-Resistance vs. Drain Current and Gate Voltage I , DRAIN CURRENT (mA) D Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004DMK Document number: DS30937 Rev JUNCTION ...
Page 4
... Ordering Information (Note 6) Part Number DMN2004DMK-7 Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2006 Code T Month Jan Feb Code 1 2 Package Outline Dimensions A TOP VIEW Suggested Pad Layout ...